Continuous MOSFET performance increase with device scaling: The role of strain and channel material innovations. - Dimitri A. Antoniadis; Ingvar Åberg; Cáit Ní Chléirigh; Osama M. Nayfeh; Ali Khaki-Firooz; Judy L. Hoyt (IBM J. Res. Dev., 2006)

Nonvolatile memory devices with colloidal, 1.0 nm silicon nanoparticles: principles of operation, fabrication, measurements, and analysis. - Osama M. Nayfeh (2009)