Investigation of the power dissipation during IGBT turn-off using a new physics-based IGBT compact model. - P. M. Igic; P. A. Mawby; M. S. Towers; W. M. Jamal; S. G. J. Batcup (Microelectron. Reliab., 2002)

A 2D physically based compact model for advanced power bipolar devices. - P. M. Igic; M. S. Towers; P. A. Mawby (Microelectron. J., 2004)

Report on 4H-SiC JTE Schottky diodes. - Li Chen; O. J. Guy; D. Doneddu; S. G. J. Batcup; S. P. Wilks; P. A. Mawby; T. Bouchet; F. Torregrosa (Microelectron. Reliab., 2006)

Modelling of current sharing in paralleled current limiting superjunction MOSFETs with common gate drives. - B. T. Donnellan; G. J. Roberts; P. A. Mawby; A. T. Bryant (Microelectron. Reliab., 2012)