Simulation of boron diffusion in Si and strained SiGe layers. - R. Kinder; F. Schwierz; P. Beno; J. Geßner (Microelectron. J., 2007)

Analysis of reliability and optimization of ESD protection devices supported by modeling and simulation. - Ales Chvála; Daniel Donoval; P. Beno; Juraj Marek; Patrik Pribytny; Marian Molnar (Microelectron. Reliab., 2012)