The effect of electrode material on the electrical conduction of metal-Pb(Zr0.53Ti0.47)O3-metal thin film capacitors. - P. C. Juan; H. C. Chou; J. Y. M. Lee (Microelectron. Reliab., 2005)

Leakage current mechanism and effect of Y2O3 doped with Zr high-K gate dielectrics. - K. C. Lin; P. C. Juan; C. H. Liu; Mu-Chun Wang; C. H. Chou (Microelectron. Reliab., 2015)

Ferroelectric of HfO2 dielectric layer sputtered with TiN or ZrN for sandwich-like metal-insulator-metal capacitors. - P. C. Juan; K. C. Lin; H. Y. Chu; Y. C. Kuo; H. W. Wang; T. Y. Shih (Microelectron. Reliab., 2018)