Lowest IOFF < 3×10-21 A/μm in capacitorless DRAM achieved by Reactive Ion Etch of IGZO-TFT. - Attilio Belmonte; Shreya Kundu; S. Subhechha; Adrian Vaisman Chasin; Nouredine Rassoul; Harold Dekkers; H. Puliyalil; F. Seidel; P. Carolan; Romain Delhougne; Gouri Sankar Kar (VLSI Technology and Circuits, 2023)