High-resolution in-situ of gold electromigration: test time reduction. - Kris Croes; R. Dreesen; Jean Manca; Ward De Ceuninck; Luc De Schepper; Luc Tielemans; P. J. van der Wel (Microelectron. Reliab., 2001)

Wear out failure mechanisms in aluminium and gold based LDMOS RF power applications. - P. J. van der Wel; S. J. C. H. Theeuwen; J. A. Bielen; Y. Li; R. A. van den Heuvel; J. G. Gommans; F. van Rijs; P. Bron; H. J. F. Peuscher (Microelectron. Reliab., 2006)

Effect of oval defects in GaAs on the reliability of SiNx metal-insulator-metal capacitors. - P. J. van der Wel; J. R. de Beer; R. J. M. van Boxtel; Y. Y. Hsieh; Y. C. Wang (Microelectron. Reliab., 2007)

Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems. - Maximilian Dammann; W. Pletschen; Patrick Waltereit; Wolfgang Bronner; Rüdiger Quay; Stefan Müller; Michael Mikulla; Oliver Ambacher; P. J. van der Wel; S. Murad; T. Rödle; R. Behtash; et al. (Microelectron. Reliab., 2009)

Qualification of 50 V GaN on SiC technology for RF power amplifiers. - P. J. van der Wel; T. Rödle; Benoit Lambert; Hervé Blanck; Maximilian Dammann (Microelectron. Reliab., 2013)

Degradation of 0.25 μm GaN HEMTs under high temperature stress test. - Maximilian Dammann; Martina Baeumler; Peter Brückner; Wolfgang Bronner; Stephan Maroldt; Helmer Konstanzer; Matthias Wespel; Rüdiger Quay; Michael Mikulla; Andreas Graff; M. Lorenzini; M. Fagerlind; et al. (Microelectron. Reliab., 2015)

Moisture absorption and desorption in wafer level chip scale packages. - Kirsten Rongen; Amar Mavinkurve; M. Chen; P. J. van der Wel; F. Swartjes; Rene T. H. Rongen (Microelectron. Reliab., 2015)