Reliability of high voltage/high power L/S-band Hbt technology. - Benoit Lambert; G. Jonsson; J. Bataille; C. Ollivier; P. Mezenge; H. Derewonko; H. Thomas; D. Floriot; Hervé Blanck; C. Moreau (Microelectron. Reliab., 2010)

Analysis of Schottky gate degradation evolution in AlGaN/GaN HEMTs during HTRB stress. - Laurent Brunel; Benoit Lambert; P. Mezenge; J. Bataille; D. Floriot; Jan Grünenpütt; Hervé Blanck; D. Carisetti; Y. Gourdel; Nathalie Malbert; Arnaud Curutchet; Nathalie Labat (Microelectron. Reliab., 2013)