Study and development of a silicon infrared diode operating under forward bias. - M. El Tahchi; E. Nassar; P. Mialhe (Microelectron. J., 2005)

Carriers temperature for an operating silicon p-n junction. - M. H. Boukhatem; M. El Tahchi; G. W. El Haj Moussa; M. Ajaka; A. Khoury; P. Mialhe (Microelectron. J., 2007)

Switching times variation of power MOSFET devices after electrical stress. - R. Habchi; C. Salame; P. Mialhe; A. Khoury (Microelectron. Reliab., 2007)

Switching times variation of MOSFET devices with temperature and high-field stress. - R. Habchi; C. Salame; R. El Bitar; P. Mialhe (Microelectron. J., 2008)

A junction characterization for microelectronic devices quality and reliability. - W. Tazibt; P. Mialhe; J. P. Charles; M. A. Belkhir (Microelectron. Reliab., 2008)