Nanosheet field effect transistors-A next generation device to keep Moore's law alive: An intensive study. - J. Ajayan; D. Nirmal; Shubham Tayal; Sandip Bhattacharya; L. Arivazhagan; A. S. Augustine Fletcher; P. Murugapandiyan; D. Ajitha (Microelectron. J., 2021)

High performance enhancement mode GaN HEMTs using β-Ga2O3 buffer for power switching and high frequency applications: A simulation study. - C. Sivamani; P. Murugapandiyan; A. Mohanbabu; A. S. Augustine Fletcher (Microelectron. J., 2023)