The influence of high-k passivation layer on breakdown voltage of Schottky AlGaN/GaN HEMTs. - Binola K. Jebalin; A. Shobha Rekh; P. Prajoon; N. Mohankumar 002; D. Nirmal (Microelectron. J., 2015)

A Hybrid Feature Extraction Method Using SeaLion Optimization for Meningioma Detection from MRI Brain Image. - S. U. Aswathy; Divya Stephen; Bibin Vincent; P. Prajoon (IBICA, 2021)

Investigation of variable field plate length in GaN HEMT on SiC substrate for MMIC applications. - Binola K. Jebalin; G. Gifta; S. Angen; P. Prajoon; D. Nirmal (Microelectron. J., 2023)

Analyzing Ga-Polar and N-Polar GaN HEMTs: A Comparative Study for High-Power DC Performance in Semiconductor Applications. - B. Mohan; J. Charles Pravin; M. Keerthi; P. Prajoon (ICDCS, 2024)

Revolutionizing Fe doped back barrier AlGaN/GaN HEMTs: Unveiling the remarkable 1700V breakdown voltage milestone. - Binola K. Jebalin; S. Angen Franklin; G. Gifta; P. Prajoon; D. Nirmal (Microelectron. J., 2024)