A closed-form delay expression for digital BiCMOS circuits with high-injection effects. - P. T. Lai; Y. C. Cheng (IEEE J. Solid State Circuits, 1994)

MOS characteristics of NO-grown oxynitrides on n-type 6H-SiC. - S. Chakraborty; P. T. Lai; Paul C. K. Kwok (Microelectron. Reliab., 2002)

Ultra-shallow n+p junction formed by PH3 and AsH3 plasma immersion ion implantation. - Bing-Liang Yang; N. W. Cheung; S. Denholm; J. Shao; Hei Wong; P. T. Lai; Y. C. Cheng (Microelectron. Reliab., 2002)

Conduction mechanisms in MOS gate dielectric films. - Bing-Liang Yang; P. T. Lai; Hei Wong (Microelectron. Reliab., 2004)

Influence of TCE concentration in thermal oxidation on reliability of SiC MOS capacitors under Fowler-Nordheim electron injection. - Bing-Liang Yang; Paul C. K. Kwok; P. T. Lai (Microelectron. Reliab., 2006)

Improved performance of GeON as charge storage layer in flash memory by optimal annealing. - Q. B. Tao; P. T. Lai (Microelectron. Reliab., 2012)

A study on the electrical characteristics of InGaZnO thin-film transistor with HfLaO gate dielectric annealed in different gases. - L. X. Qian; P. T. Lai (Microelectron. Reliab., 2014)