Thermal annealing studies in epitaxial 4H-SiC Schottky barrier diodes over wide temperature range. - P. Vigneshwara Raja; Neti V. L. Narasimha Murty (Microelectron. Reliab., 2018)

Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes. - P. Vigneshwara Raja; Christophe Raynaud; Camille Sonneville; Atse Julien Eric N'Dohi; Hervé Morel; Luong-Viêt Phung; Thi Huong Ngo; Philippe De Mierry; Éric Frayssinet; Hassan Maher; Josiane Tasselli; Karine Isoird; et al. (Microelectron. J., 2022)