A 159mm2 32nm 32Gb MLC NAND-flash memory with 200MB/s asynchronous DDR interface. - Hyunggon Kim; Jung-Hoon Park; Ki-Tae Park; Pansuk Kwak; Ohsuk Kwon; Chulbum Kim; Younyeol Lee; Sangsoo Park; Kyungmin Kim; Doohyun Cho; Juseok Lee; Jungho Song; et al. (ISSCC, 2010)

A 7MB/s 64Gb 3-bit/cell DDR NAND flash memory in 20nm-node technology. - Ki-Tae Park; Ohsuk Kwon; Sangyong Yoon; Myung-Hoon Choi; In-Mo Kim; Bo-Geun Kim; Min-Seok Kim; Yoon-Hee Choi; Seung-Hwan Shin; Youngson Song; Joo-Yong Park; Jae-Eun Lee; et al. (ISSCC, 2011)

A 21 nm High Performance 64 Gb MLC NAND Flash Memory With 400 MB/s Asynchronous Toggle DDR Interface. - Chulbum Kim; Jinho Ryu; Tae-Sung Lee; Hyunggon Kim; Jaewoo Lim; Jaeyong Jeong; Seonghwan Seo; Hongsoo Jeon; Bokeun Kim; Inyoul Lee; Dooseop Lee; Pansuk Kwak; et al. (IEEE J. Solid State Circuits, 2012)

19.5 Three-dimensional 128Gb MLC vertical NAND Flash-memory with 24-WL stacked layers and 50MB/s high-speed programming. - Ki-Tae Park; Jin-Man Han; Dae-Han Kim; Sangwan Nam; Kihwan Choi; Minsu Kim 004; Pansuk Kwak; Doosub Lee; Yoon-Hee Choi; Kyung-Min Kang; Myung-Hoon Choi; Dong-Hun Kwak; et al. (ISSCC, 2014)

Three-Dimensional 128 Gb MLC Vertical nand Flash Memory With 24-WL Stacked Layers and 50 MB/s High-Speed Programming. - Ki-Tae Park; Sangwan Nam; Dae-Han Kim; Pansuk Kwak; Doosub Lee; Yoon-Hee Choi; Myung-Hoon Choi; Dong-Hun Kwak; Doo-Hyun Kim; Minsu Kim 004; Hyun Wook Park; Sang-Won Shim; et al. (IEEE J. Solid State Circuits, 2015)

7.1 256Gb 3b/cell V-NAND flash memory with 48 stacked WL layers. - Dongku Kang; Woopyo Jeong; Chulbum Kim; Doo-Hyun Kim; Yong-Sung Cho; Kyung-Tae Kang; Jinho Ryu; Kyung-Min Kang; Sungyeon Lee; Wandong Kim; Hanjun Lee; Jaedoeg Yu; et al. (ISSCC, 2016)

11.4 A 512Gb 3b/cell 64-stacked WL 3D V-NAND flash memory. - Chulbum Kim; Ji-Ho Cho; Woopyo Jeong; Il-Han Park; Hyun Wook Park; Doo-Hyun Kim; Daewoon Kang; Sunghoon Lee; Ji-Sang Lee; Wontae Kim 004; Jiyoon Park; Yang-Lo Ahn; et al. (ISSCC, 2017)

256 Gb 3 b/Cell V-nand Flash Memory With 48 Stacked WL Layers. - Dongku Kang; Woopyo Jeong; Chulbum Kim; Doo-Hyun Kim; Yong-Sung Cho; Kyung-Tae Kang; Jinho Ryu; Kyung-Min Kang; Sungyeon Lee; Wandong Kim; Hanjun Lee; Jaedoeg Yu; et al. (IEEE J. Solid State Circuits, 2017)

A 512-Gb 3-b/Cell 64-Stacked WL 3-D-NAND Flash Memory. - Chulbum Kim; Doo-Hyun Kim; Woopyo Jeong; Hyun-Jin Kim; Il-Han Park; Hyun Wook Park; Jong-Hoon Lee; Jiyoon Park; Yang-Lo Ahn; Ji Young Lee; Seungbum Kim; Hyun-Jun Yoon; et al. (IEEE J. Solid State Circuits, 2018)

13.1 A 1Tb 4b/cell NAND Flash Memory with tPROG=2ms, tR=110µs and 1.2Gb/s High-Speed IO Rate. - Doo-Hyun Kim; Hyunggon Kim; Sung-Won Yun; Youngsun Song; Jisu Kim; Sung-Min Joe; Kyung-Hwa Kang; Joonsuc Jang; Hyun-Jun Yoon; Kangbin Lee; Minseok Kim; Joonsoo Kwon; et al. (ISSCC, 2020)

A 512Gb 3b/Cell 7th -Generation 3D-NAND Flash Memory with 184MB/s Write Throughput and 2.0Gb/s Interface. - Jiho Cho; D. Chris Kang; Jongyeol Park; Sangwan Nam; Jung-Ho Song; Bong-Kil Jung; Jaedoeg Lyu; Hogil Lee; Won-Tae Kim 004; Hongsoo Jeon; Sunghoon Kim 001; In-Mo Kim; et al. (ISSCC, 2021)

A 1Tb 3b/Cell 8th-Generation 3D-NAND Flash Memory with 164MB/s Write Throughput and a 2.4Gb/s Interface. - Moosung Kim; Sung-Won Yun; Jungjune Park; Hyun Kook Park; Jungyu Lee 002; Yeong Seon Kim; Dae-Hoon Na; Sara Choi; Youngsun Song; Jonghoon Lee; Hyun-Jun Yoon; Kangbin Lee; et al. (ISSCC, 2022)