Effective mobility and interface-state density of La2O3 nMISFETs after post deposition annealing. - Jin-Aun Ng; Nobuyuki Sugii; Kuniyuki Kakushima; Parhat Ahmet; Kazuo Tsutsui; Takeo Hattori; Hiroshi Iwai (IEICE Electron. Express, 2006)

Carrier separation and Vth measurements of W-La2O3 gated MOSFET structures after electrical stress. - Joel Molina Reyes; Kuniyuki Kakushima; Parhat Ahmet; Kazuo Tsutsui; Nobuyuki Sugii; Takeo Hattori; Hiroshi Iwai (IEICE Electron. Express, 2007)

Parasitic Effects in Multi-Gate MOSFETs. - Yusuke Kobayashi 002; C. Raghunathan Manoj; Kazuo Tsutsui; Venkanarayan Hariharan; Kuniyuki Kakushima; V. Ramgopal Rao; Parhat Ahmet; Hiroshi Iwai (IEICE Trans. Electron., 2007)

Electrical characteristics of MOSFETs with La2O3/Y2O3 gate stack. - Parhat Ahmet; Kentaro Nakagawa; Kuniyuki Kakushima; Hiroshi Nohira; Kazuo Tsutsui; Nobuyuki Sugii; Takeo Hattori; Hiroshi Iwai (Microelectron. Reliab., 2008)

SrO capping effect for La2O3/Ce-silicate gate dielectrics. - Kuniyuki Kakushima; K. Okamoto; T. Koyanagi; M. Kouda; Kiichi Tachi; Takamasa Kawanago; J. Song; Parhat Ahmet; Hiroshi Nohira; Kazuo Tsutsui; Nobuyuki Sugii; Takeo Hattori; et al. (Microelectron. Reliab., 2010)

Advantage of further scaling in gate dielectrics below 0.5 nm of equivalent oxide thickness with La2O3 gate dielectrics. - Kuniyuki Kakushima; Kiichi Tachi; Parhat Ahmet; Kazuo Tsutsui; Nobuyuki Sugii; Takeo Hattori; Hiroshi Iwai (Microelectron. Reliab., 2010)

Analysis of dependence of short-channel effects in double-gate MOSFETs on channel thickness. - Yusuke Kobayashi 002; Kuniyuki Kakushima; Parhat Ahmet; V. Ramgopal Rao; Kazuo Tsutsui; Hiroshi Iwai (Microelectron. Reliab., 2010)

Si nanowire FET and its modeling. - Hiroshi Iwai; Kenji Natori; Kenji Shiraishi; Jun-ichi Iwata; Atsushi Oshiyama; Keisaku Yamada; Kenji Ohmori; Kuniyuki Kakushima; Parhat Ahmet (Sci. China Inf. Sci., 2011)

Structural advantages of rectangular-like channel cross-section on electrical characteristics of silicon nanowire field-effect transistors. - Soshi Sato; Kuniyuki Kakushima; Parhat Ahmet; Kenji Ohmori; Kenji Natori; Keisaku Yamada; Hiroshi Iwai (Microelectron. Reliab., 2011)

Effects of La2O3 incorporation in HfO2 gated nMOSFETs on low-frequency noise. - D. Zade; Soshi Sato; Kuniyuki Kakushima; A. Srivastava; Parhat Ahmet; Kazuo Tsutsui; Akira Nishiyama; Nobuyuki Sugii; Kenji Natori; Takeo Hattori; Chandan Kumar Sarkar; Hiroshi Iwai (Microelectron. Reliab., 2011)

(100)- and (110)-oriented nMOSFETs with highly scaled EOT in La-silicate/Si interface for multi-gate architecture. - Takamasa Kawanago; Kuniyuki Kakushima; Parhat Ahmet; Yoshinori Kataoka; Akira Nishiyama; Nobuyuki Sugii; Kazuo Tsutsui; Kenji Natori; Takeo Hattori; Hiroshi Iwai (ESSDERC, 2012)

Resistive switching behavior of a CeO2 based ReRAM cell incorporated with Si buffer layer. - Chunmeng Dou; Kuniyuki Kakushima; Parhat Ahmet; Kazuo Tsutsui; Akira Nishiyama; Nobuyuki Sugii; Kenji Natori; Takeo Hattori; Hiroshi Iwai (Microelectron. Reliab., 2012)

Oxide and interface trap densities estimation in ultrathin W/La2O3/Si MOS capacitors. - M. Mamatrishat; T. Kubota; T. Seki; Kuniyuki Kakushima; Parhat Ahmet; Kazuo Tsutsui; Yoshinori Kataoka; Akira Nishiyama; Nobuyuki Sugii; Kenji Natori; Takeo Hattori; Hiroshi Iwai (Microelectron. Reliab., 2012)

Characterization of interface state density of three-dimensional Si nanostructure by charge pumping measurement. - Chunmeng Dou; Tomoya Shoji; Kazuhiro Nakajima; Kuniyuki Kakushima; Parhat Ahmet; Yoshinori Kataoka; Akira Nishiyama; Nobuyuki Sugii; Hitoshi Wakabayashi; Kazuo Tsutsui; Kenji Natori; Hiroshi Iwai (Microelectron. Reliab., 2014)