Al0.87Ga0.13N/Al0.64Ga0.36N HFET with fT >17 GHz and Vbr > 360 V. - Jiahao Chen 007; Kenneth Stephenson; Md Abdullah Mamun; Zehuan Wang; Parthasarathy Seshadri; Asif Khan 011; Chirag Gupta (DRC, 2024)