230-GHz self-aligned SiGeC HBT for optical and millimeter-wave applications. - Pascal Chevalier 002; Cyril Fellous; Laurent Rubaldo; Franck Pourchon; Sébastien Pruvost; Rudy Beerkens; Fabienne Saguin; Nicolas Zerounian; Benoît Barbalat; Sylvie Lépilliet; Didier Dutartre; Didier Céli; et al. (IEEE J. Solid State Circuits, 2005)

Towards a sub-2.5V, 100-Gb/s Serial Transceiver. - Sorin P. Voinigescu; Ricardo Andres Aroca; Timothy O. Dickson; Sean T. Nicolson; Theodoros Chalvatzis; Pascal Chevalier 002; Patrice Garcia; Christophe Gamier; Bernard Sautreuil (CICC, 2007)

Design and Scaling of W-Band SiGe BiCMOS VCOs. - Sean T. Nicolson; Kenneth H. K. Yau; Pascal Chevalier 002; Alain Chantre; Bernard Sautreuil; Keith W. Tang; Sorin P. Voinigescu (IEEE J. Solid State Circuits, 2007)

Will BiCMOS stay competitive for mmW applications ? - Patrice Garcia; Alain Chantre; Sébastien Pruvost; Pascal Chevalier 002; Sean T. Nicolson; David Roy 001; Sorin P. Voinigescu; Christophe Garnier (CICC, 2008)

165-GHz Transceiver in SiGe Technology. - Ekaterina Laskin; Pascal Chevalier 002; Alain Chantre; Bernard Sautreuil; Sorin P. Voinigescu (IEEE J. Solid State Circuits, 2008)

Single-Chip W-band SiGe HBT Transceivers and Receivers for Doppler Radar and Millimeter-Wave Imaging. - Sean T. Nicolson; Pascal Chevalier 002; Bernard Sautreuil; Sorin P. Voinigescu (IEEE J. Solid State Circuits, 2008)

Impact of inside spacer process on fully self-aligned 250 GHz SiGe: C HBTs reliability performances: a-Si vs. nitride. - Malick Diop; Nathalie Revil; M. Marin; Frederic Monsieur; Pascal Chevalier 002; Gérard Ghibaudo (Microelectron. Reliab., 2008)

Pushing the speed limits of SiGe: C HBTs up to 0.5 Terahertz. - Stefaan Decoutere; Stefaan Van Huylenbroeck; Bernd Heinemann; Alexander Fox; Pascal Chevalier 002; Alain Chantre; Thomas F. Meister; Klaus Aufinger; Michael Schröter (CICC, 2009)

0.13µm SiGe BiCMOS Technology Fully Dedicated to mm-Wave Applications. - Grégory Avenier; Malick Diop; Pascal Chevalier 002; Germaine Troillard; Nicolas Loubet; Julien Bouvier; Linda Depoyan; Nicolas Derrier; Michel Buczko; Cédric Leyris; Samuel Boret; Sébastien Montusclat; et al. (IEEE J. Solid State Circuits, 2009)

An 18-Gb/s, Direct QPSK Modulation SiGe BiCMOS Transceiver for Last Mile Links in the 70-80 GHz Band. - Ioannis Sarkas; Sean T. Nicolson; Alexander Tomkins; Ekaterina Laskin; Pascal Chevalier 002; Bernard Sautreuil; Sorin P. Voinigescu (IEEE J. Solid State Circuits, 2010)

Design of a Dual W- and D-Band PLL. - Shahriar Shahramian; Adam Hart; Alexander Tomkins; Anthony Chan Carusone; Patrice Garcia; Pascal Chevalier 002; Sorin P. Voinigescu (IEEE J. Solid State Circuits, 2011)

A 0.32 THz FMCW radar system based on low-cost lens-integrated SiGe HBT front-ends. - Konstantin Statnikov; Erik Öjefors; Janusz Grzyb; Pascal Chevalier 002; Ullrich R. Pfeiffer (ESSCIRC, 2013)

A Study of SiGe HBT Signal Sources in the 220-330-GHz Range. - Sorin P. Voinigescu; Alexander Tomkins; Eric Dacquay; Pascal Chevalier 002; Jürgen Hasch; Alain Chantre; Bernard Sautreuil (IEEE J. Solid State Circuits, 2013)

Study of low frequency noise in advanced SiGe: C heterojunction bipolar transistors. - Marcelino Seif; Fabien Pascal; Bruno Sagnes; Alain Hoffmann; Sébastien Haendler; Pascal Chevalier 002; Daniel Gloria (ESSDERC, 2014)

Dispersion study of DC and Low Frequency Noise in SiGe: C Heterojunction Bipolar Transistors used for mm-Wave to Terahertz applications. - Marcelino Seif; Fabien Pascal; Bruno Sagnes; Alain Hoffmann; Sébastien Haendler; Pascal Chevalier 002; Daniel Gloria (Microelectron. Reliab., 2014)

55-nm SiGe BiCMOS Distributed Amplifier Topologies for Time-Interleaved 120-Gb/s Fiber-Optic Receivers and Transmitters. - James Hoffman; Stefan Shopov; Pascal Chevalier 002; Andreia Cathelin; Peter Schvan; Sorin P. Voinigescu (IEEE J. Solid State Circuits, 2016)

A 234-261-GHz 55-nm SiGe BiCMOS Signal Source with 5.4-7.2 dBm Output Power, 1.3% DC-to-RF Efficiency, and 1-GHz Divided-Down Output. - Stefan Shopov; Andreea Balteanu; Jürgen Hasch; Pascal Chevalier 002; Andreia Cathelin; Sorin P. Voinigescu (IEEE J. Solid State Circuits, 2016)

Characterization, modeling and comparison of 1/f noise in Si/SiGe: C HBTs issued from three advanced BiCMOS technologies. - Marcelino Seif; Fabien Pascal; Bruno Sagnes; J. Elbeyrouthy; Alain Hoffmann; Sébastien Haendler; Pascal Chevalier 002; Daniel Gloria (ICM, 2017)

Si/SiGe: C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications. - Pascal Chevalier 002; Michael Schröter; Colombo R. Bolognesi; Vincenzo d'Alessandro; Maria Alexandrova; Josef Böck; Ralf Flickiger; Sébastien Fregonese; Bernd Heinemann; Christoph Jungemann; Rickard Lovblom; Cristell Maneux; et al. (Proc. IEEE, 2017)

SiGe HBT Technology: Future Trends and TCAD-Based Roadmap. - Michael Schröter; Tommy Rosenbaum; Pascal Chevalier 002; Bernd Heinemann; Sorin P. Voinigescu; Ed Preisler; Josef Böck; Anindya Mukherjee (Proc. IEEE, 2017)

SiGe BiCMOS Current Status and Future Trends in Europe. - Pascal Chevalier 002; Wolfgang Liebl; Holger Rücker; Alexis Gauthier; Dirk Manger; Bernd Heinemann; Grégory Avenier; Josef Böck (BCICTS, 2018)

450 GHz fT SiGe: C HBT Featuring an Implanted Collector in a 55-nm CMOS Node. - Alexis Gauthier; Julien Borrel; Pascal Chevalier 002; Grégory Avenier; A. Montagné; M. Juhel; R. Duru; L.-R. Clément; C. Borowiak; Michel Buczko; Christophe Gaquière (BCICTS, 2018)

Smart Way to Adjust Schottky Barrier Height in 130 nm BiCMOS Process for sub-THz Applications. - Vincent Gidel; Frédéric Gianesello; Pascal Chevalier 002; Grégory Avenier; Nicolas Guitard; Michel Buczko; Cyril Luxey; Guillaume Ducournau (RWS, 2020)

Electro-Thermal Limitations and Device Degradation of SiGe HBTs with Emphasis on Circuit Performance. - Sébastien Fregonese; Chhandak Mukherjee; Holger Rücker; Pascal Chevalier 002; Gerhard Fischer; Didier Céli; Marina Deng; Marine Couret; François Marc; Cristell Maneux; Thomas Zimmer (BCICTS, 2021)

200-GS/s ADC Front-End Employing 25% Duty Cycle Quadrature Clock Generator. - Naftali Weiss; Gregory Cooke; Peter Schvan; Pascal Chevalier 002; Andreia Cathelin; Sorin P. Voinigescu (ESSCIRC, 2021)

Compact E-Band I/Q Receiver in SiGe BiCMOS for 5G Backhauling Applications. - Giandomenico Amendola; Luigi Boccia; Francesco Centurelli; Pascal Chevalier 002; Alessandro Fonte; Carmine Mustacchio; Andrea Pallotta; Pasquale Tommasino; Antonio Traversa; Alessandro Trifiletti (IEEE Trans. Circuits Syst. II Express Briefs, 2021)

The Hardware Foundation of 6G: The NEW-6G Approach. - Emilio Calvanese Strinati; Michaël Peeters; César Roda Neve; Manil Dev Gomony; Andreia Cathelin; Mauro Renato Boldi; Mark Ingels; Aritra Banerjee; Pascal Chevalier 002; Bartek Kozicki; Didier Belot (EuCNC, 2022)

Optical Phased Array for 905-nm LIDAR applications integrated on 300mm Si-Photonic Platform. - Stéphane Monfray; Sylvain Guerber; Aude Montagné; Daivid Fowler; Philippe Grosse; Jonathan Planchot; Delia Ristoiu; Fabrice Baron; Melissa Brihoum; Laurene Babaud; Arnaud Taute; Eva Kempf; et al. (OFC, 2022)

Low-Noise Si/SiGe HBT for LEO Satellite User Terminals in Ku-Ka Bands. - A. Gauthier; E. Brezza; A. Montagné; N. Guitard; J. Azevedo Goncalves; Michel Buczko; S. Jan; N. Derrier; Didier Céli; C. Deglise-Favre; J. Ma; H. Audouin; et al. (BCICTS, 2023)

40-nm RFSOI technology exhibiting 90fs RON × COFF and fT/fMAX of 250 GHz/350 GHz targeting sub-6 GHz and mmW 5G applications. - S. Crémer; N. Pelloux; F. Gianesello; Y. Mourier; G. Haury; Tulio Chaves de Albuquerque; Frederic Monsieur; H. Audouin; C. A. Legrand; C. Diouf; J. Azevedo Goncalves; C. Belem Goncalves; et al. (ESSDERC, 2023)

Die-to-Wafer Hybrid Bonding Impact at MM-Wave Frequencies. - Mohammad Alsukour; Olivier Valorge; Margot Faure; Loïc Vincent; Victor Milon; Pascal Chevalier 002; Emmanuel Pistono; Jean-Daniel Arnould; Christophe Dubarry (3DIC, 2024)

A Versatile 55-nm SiGe BiCMOS Technology for Wired, Wireless, and Satcom Applications. - Pascal Chevalier 002; Florian Cacho; C. Durand; N. Derrier; V. Millon; Frederic Monsieur; A. Gauthier; P. Billy; Sébastien Fregonese; Thomas Zimmer; H. Audouin; Michel Buczko; et al. (BCICTS, 2024)

A Methodology to Address RF Aging of 40nm CMOS PA Cells Under 5G mmW Modulation Profiles. - A. Divay; Cédric Dehos; Ismael Charlet; Fred Gaillard; B. Duriez; Xavier Garros; J. Antonijevic; Joycelyn Hai; Nathalie Revil; Jeremie Forest; Vincent Knopik; Florian Cacho; et al. (IRPS, 2024)