Characterization of the transient behavior of gated/STI diodes and their associated BJT in the CDM time domain. - Jean-Robert Manouvrier; Pascal Fonteneau; Charles-Alexandre Legrand; Pascal Nouet; Florence Azaïs (Microelectron. Reliab., 2009)

Novel back-biased UTBB lateral SCR for FDSOI ESD protections. - Yohann Solaro; Pascal Fonteneau; Charles-Alexandre Legrand; Claire Fenouillet-Béranger; Philippe Ferrari; Sorin Cristoloveanu (ESSDERC, 2013)

Sharp-switching Z2-FET device in 14 nm FDSOI technology. - Hassan El Dirani; Yohann Solaro; Pascal Fonteneau; Philippe Ferrari; Sorin Cristoloveanu (ESSDERC, 2015)

Novel FDSOI band-modulation device: Z2-FET with Dual Ground Planes. - Hassan El Dirani; Pascal Fonteneau; Yohann Solaro; Philippe Ferrari; Sorin Cristoloveanu (ESSDERC, 2016)

Sharp switching, hysteresis-free characteristics of Z2-FET for fast logic applications. - Kyunghwa Lee; Hassan El Dirani; Pascal Fonteneau; Maryline Bawedin; Shingo Sato; Sorin Cristoloveanu (ESSDERC, 2018)

4.6µm Low Power Indirect Time-of-Flight Pixel Achieving 88.5% Demodulation Contrast at 200MHz for 0.54MPix Depth Camera. - Cédric Tubert; Pascal Mellot; Yann Desprez; Celine Mas; Arnaud Authié; Laurent Simony; Grégory Bochet; Stephane Drouard; Jeremie Teyssier; Damien Miclo; Jean-Raphael Bezal; Thibault Augey; et al. (ESSCIRC, 2021)

$4.6 mu mathrm{m}$ Low Power Indirect Time-of-Flight Pixel Achieving 88.5% Demodulation Contrast at 200MHz for 0.54MPix Depth Camera. - Cédric Tubert; Pascal Mellot; Yann Desprez; Celine Mas; Arnaud Authié; Laurent Simony; Grégory Bochet; Stephane Drouard; Jeremie Teyssier; Damien Miclo; Jean-Raphael Bezal; Thibault Augey; et al. (ESSDERC, 2021)