New distributed model of NPT IGBT dedicated to power circuits design. - Guillaume Bonnet; Patrick Austin; Jean-Louis Sanchez (Microelectron. Reliab., 2004)

Performance and reliability testing of modern IGBT devices under typical operating conditions of aeronautic applications. - Jean-Luc Fock Sui Too; B. Chauchat; Patrick Austin; Patrick Tounsi; Michel Mermet-Guyennet; Régis Meuret (Microelectron. Reliab., 2008)

Comparative study of sensitive volume and triggering criteria of SEB in 600 V planar and trench IGBTs. - Moustafa Zerarka; Patrick Austin; Marise Bafleur (Microelectron. Reliab., 2011)

Analysis of an ESD failure mechanism on a SiC MESFET. - Tanguy Phulpin; David Trémouilles; Karine Isoird; Dominique Tournier; Philippe Godignon; Patrick Austin (Microelectron. Reliab., 2014)

An improved junction termination design using deep trenches for superjunction power devices. - Sylvain Noblecourt; Frederic Morancho; Karine Isoird; Patrick Austin; Josiane Tasselli (MIXDES, 2015)

Failure analysis of ESD-stressed SiC MESFET. - Tanguy Phulpin; David Trémouilles; Karine Isoird; Dominique Tournier; Philippe Godignon; Patrick Austin (Microelectron. Reliab., 2015)

Design Optimization of a New Nanostructured P-GaN Gate for Normally-off GaN HEMTs. - Daniel Rouly; Josiane Tasselli; Patrick Austin; Chaymaa Haloui; Karine Isoird; Frédéric Morancho (MIXDES, 2022)