Ferroelectric Hf1-xZrxO2 memories: device reliability and depolarization fields. - Patrick D. Lomenzo; Stefan Slesazeck; Michael Hoffmann 008; Thomas Mikolajick; Uwe Schroeder; Benjamin Max (NVMTS, 2019)

Reliability aspects of ferroelectric hafnium oxide for application in non-volatile memories. - Halid Mulaosmanovic; Patrick D. Lomenzo; Uwe Schroeder; Stefan Slesazeck; Thomas Mikolajick; Benjamin Max (IRPS, 2021)