CARbridge, Reduction of System Complexity by Standardisation of the System-Basis-Chips for Automotive Applications. - Patrick Scheer; Ernst Schmidt; Stefan Burges (DATE, 2008)

4-Port isolated MOS modeling and extraction for mmW applications. - Benjamin Dormieu; Patrick Scheer; Clement Charbuillet; Sebastien Jan; François Danneville (ESSCIRC, 2012)

Reliability Characterization and Modeling Solution to Predict Aging of 40-nm MOSFET DC and RF Performances Induced by RF Stresses. - Laurent Negre; David Roy 001; Florian Cacho; Patrick Scheer; Sebastien Jan; Samuel Boret; Daniel Gloria; Gérard Ghibaudo (IEEE J. Solid State Circuits, 2012)

Analog and RF modeling of FDSOI UTBB MOSFET using Leti-UTSOI model. - Salim El Ghouli; Patrick Scheer; Michel Minondo; Andre Juge; Thierry Poiroux; Jean-Michel Sallese; Christophe Lallement (MIXDES, 2016)

Analysis of Gate Current Wafer Level Variability in Advanced FD-SOI MOSFETs. - Krishna Pradeep; Theano A. Karatsori; Thierry Poiroux; Andre Juge; Patrick Scheer; Gilles Gouget; Emmanuel Josse; Gérard Ghibaudo (ESSDERC, 2018)

Design-Oriented All-Regime All-Region 7-Parameter Short-Channel MOSFET Model Based on Inversion Charge. - Dayana A. Pino-Monroy; Patrick Scheer; Mohamed Khalil Bouchoucha; Carlos Galup-Montoro; Manuel J. Barragán; Philippe Cathelin; Jean-Michel Fournier; Andreia Cathelin; Sylvain Bourdel (IEEE Access, 2022)

40-nm RFSOI technology exhibiting 90fs RON × COFF and fT/fMAX of 250 GHz/350 GHz targeting sub-6 GHz and mmW 5G applications. - S. Crémer; N. Pelloux; F. Gianesello; Y. Mourier; G. Haury; Tulio Chaves de Albuquerque; Frederic Monsieur; H. Audouin; C. A. Legrand; C. Diouf; J. Azevedo Goncalves; C. Belem Goncalves; et al. (ESSDERC, 2023)

Resistive Feedback LNA design using a 7-parameter design-oriented model for advanced technologies. - Mohamed Khalil Bouchoucha; Dayana A. Pino-Monroy; Patrick Scheer; Philippe Cathelin; Jean-Michel Fournier; Manuel J. Barragán; Andreia Cathelin; Sylvain Bourdel (ISCAS, 2023)

Design-oriented model for short-channel MOS transistors based on inversion charge. - Dayana A. Pino-Monroy; Patrick Scheer; Mohamed Khalil Bouchoucha; Carlos Galup-Montoro; Manuel J. Barragán; Jean-Michel Fournier; Andreia Cathelin; Sylvain Bourdel (LASCAS, 2023)

Corrections to "Design-Oriented All-Regime All-Region 7-Parameter Short-Channel MOSFET Model Based on Inversion Charge". - Dayana A. Pino-Monroy; Patrick Scheer; Mohamed Khalil Bouchoucha; Carlos Galup-Montoro; Manuel J. Barragán; Philippe Cathelin; Jean-Michel Fournier; Andreia Cathelin; Sylvain Bourdel (IEEE Access, 2023)