Quantification of Dopant Profiles in SiGe HBT Devices. - Eric J. Jones; Jonathan D. Poplawsky; Donavan Leonard; Keith Chung; Kevin Mercurio; Paul Brabant; Thomas Adam; Patrick B. Shea; Thomas Knight (BCICTS, 2018)

Yield and Scaling Improvements in Next-Generation 2.5 THz SLCFET Devices to Enable Ultra-wideband DC-110GHz Switch MMICs. - Jerome T. Mlack; Nick Edwards; Brian Novak; Annaliese Drechsler; Jordan Merkel; Timothy Vasen; Daniel J. Hannan; Paul Brabant; Ishan Wathuthanthri; Justin Parke; Sam Wanis; Robert S. Howell; et al. (BCICTS, 2021)