3D-stacked Strained SiGe/Ge Gate-All-Around (GAA) Structure Fabricated by 3D Ge Condensation. - Junkyo Suh; Andrew C. Meng; Marc Jaikissoon; Michael Braun; Taeho R. Kim; Ann F. Marshall; Anahita Pakzad; Paul C. McIntyre; Krishna C. Saraswat (DRC, 2019)

The Field-dependence Endurance Model and Its Mutual Effect in Hf-based Ferroelectrics. - Y. K. Chang; P. J. Liao; S. H. Yeong; Y.-M. Lin; J. H. Lee; C. T. Lin; Z. Yu; Wilman Tsai; Paul C. McIntyre (IRPS, 2022)

4 Bits/cell Hybrid 1F1R for High Density Embedded Non-Volatile Memory and its Application for Compute in Memory. - Wei-Chen Chen; F. Huang; S. Qin; Z. Yu; Q. Lin; Paul C. McIntyre; Simon S. Wong; H.-S. Philip Wong (VLSI Technology and Circuits, 2022)

Innovating at Speed and at Scale: A Next Generation Infrastructure for Accelerating Semiconductor Technologies. - Richard A. Gottscho; Edlyn V. Levine; Tsu-Jae King Liu; Paul C. McIntyre; Subhasish Mitra; Boris Murmann; Jan M. Rabaey; Sayeef S. Salahuddin; Willy C. Shih; H.-S. Philip Wong (CoRR, 2022)

First Observation of Ultra-high Polarization ( 108 μC/cm²) in Nanometer Scaled High Performance Ferroelectric HZO Capacitors with Mo Electrodes. - F. Huang; B. Saini; L. Wan; H. Lu; X. He; S. Qin; Wilman Tsai; A. Gruverman; Andrew C. Meng; H.-S. Philip Wong; Paul C. McIntyre; Simon S. Wong (VLSI Technology and Circuits, 2023)