Flat band voltage shift and oxide properties after rapid thermal annealing. - Barry J. O'Sullivan; Paul K. Hurley; F. N. Cubaynes; P. A. Stolk; F. P. Widdershoven (Microelectron. Reliab., 2001)

Electrical characterization of HfO2 films obtained by UV assisted injection MOCVD. - J. M. Decams; H. Guillon; Carmen Jiménez; M. Audier; J. P. Sénateur; C. Dubourdieu; O. Cadix; Barry J. O'Sullivan; Mircea Modreanu; Paul K. Hurley (Microelectron. Reliab., 2005)

Post deposition UV-induced O2 annealing of HfO2 thin films. - Q. Fang; I. Liaw; Mircea Modreanu; Paul K. Hurley; I. W. Boyd (Microelectron. Reliab., 2005)

Editorial. - Paul K. Hurley (Microelectron. Reliab., 2005)

Optical and electrical characterization of hafnium oxide deposited by MOCVD. - Y. Lu; Octavian Buiu; Steve Hall; Paul K. Hurley (Microelectron. Reliab., 2005)

Extracting the relative dielectric constant for "high-kappa layers" from CV measurements - Errors and error propagation. - Octavian Buiu; Steve Hall; Olof Engström; B. Raeissi; Max Christian Lemme; Paul K. Hurley; Karim Cherkaoui (Microelectron. Reliab., 2007)

Physical and electrical properties of low dielectric constant self-assembled mesoporous silica thin films. - Richard A. Farrell; Karim Cherkaoui; Nikolay Petkov; Heinz Amenitsch; Justin D. Holmes; Paul K. Hurley; Michael A. Morris (Microelectron. Reliab., 2007)

Characterisation and passivation of interface defects in (1 0 0)-Si/SiO2/HfO2/TiN gate stacks. - Paul K. Hurley; Karim Cherkaoui; S. McDonnell; G. Hughes; A. W. Groenland (Microelectron. Reliab., 2007)

Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks. - Enrique Miranda 002; Javier Martín-Martínez; Eamon O'Connor; G. Hughes; P. Casey; Karim Cherkaoui; S. Monaghan; R. Long; D. O'Connell; Paul K. Hurley (Microelectron. Reliab., 2009)

Exploratory analysis of the breakdown spots spatial distribution in metal gate/high-K/III-V stacks using functional summary statistics. - Enrique Miranda 002; Eamon O'Connor; Paul K. Hurley (Microelectron. Reliab., 2010)

Direct observation of the generation of breakdown spots in MIM structures under constant voltage stress. - X. Saura; D. Moix; Jordi Suñé; Paul K. Hurley; Enrique Miranda 002 (Microelectron. Reliab., 2013)

Impact of impurities, interface traps and contacts on MoS2 MOSFETs: Modelling and experiments. - Gioele Mirabelli; Farzan Gity; Scott Monaghan; Paul K. Hurley; Ray Duffy (ESSDERC, 2017)

Advances of the development of a ferroelectric field-effect transistor on Ge(001). - Patrick Ponath; Agham B. Posadas; Yuan Ren; Xiaoyu Wu; Keji Lai; Alex Demkov; Michael Schmidt; Ray Duffy; Paul K. Hurley; Jian Wang; Chadwin D. Young; Rama K. Vasudevan; et al. (ICICDT, 2017)

High Aspect Ratio Junctionless InGaAs FinFETs Fabricated Using a Top-Down Approach. - D. A. J. Millar; X. Li; U. Peralagu; M. J. Steer; I. M. Pavey; Guilherme Gaspar; M. Schmidt; Paul K. Hurley; I. G. Thayne (DRC, 2018)