A novel approach to characterization of progressive breakdown in high-k/metal gate stacks. - R. Pagano; Salvatore Lombardo; Felix Palumbo; Paul Kirsch; S. A. Krishnan; Chadwin D. Young; Rino Choi; Gennadi Bersuker; James H. Stathis (Microelectron. Reliab., 2008)

Memory overview and RRAM materials development at SEMATECH. - Paul Kirsch (Hot Chips Symposium, 2010)

High Transport Si/SiGe Heterostructures for CMOS Transistors with Orientation and Strain Enhanced Mobility. - Jungwoo Oh; Jeff Huang 005; Injo Ok; Se-Hoon Lee; Paul D. Kirsch; Raj Jammy; Hi-Deok Lee (IEICE Trans. Electron., 2011)

Emerging CMOS and beyond CMOS technologies for an ultra-low power 3D world. - Chang Yong Kang; K. W. Ang; R. Hill; W. Y. Loh; Jungwoo Oh; Rinus Lee; David Gilmer; Gennadi Bersuker; C. Hobbs; Paul Kirsch; Klaus Hummler; S. Arkalgud; et al. (ICICDT, 2012)

Connecting RRAM performance to the properties of the hafnia-based dielectrics. - Gennadi Bersuker; Brian Butcher; David Gilmer; Paul Kirsch; Luca Larcher; Andrea Padovani (ESSDERC, 2013)