Charge trapping and interface states in hydrogen annealed HfO2-Si structures. - Y. V. Gomeniuk; A. N. Nazarov; Ya. N. Vovk; V. S. Lysenko; Yi Lu; Octavian Buiu; Steve Hall; R. J. Potter; Paul R. Chalker (Microelectron. Reliab., 2007)

Tuneable electrical properties of hafnium aluminate gate dielectrics deposited by metal organic chemical vapour deposition. - Y. Lu; Octavian Buiu; Steve Hall; Ivona Z. Mitrovic; W. Davey; R. J. Potter; Paul R. Chalker (Microelectron. Reliab., 2007)

Optical and electrical characterization of hafnium oxide deposited by liquid injection atomic layer deposition. - P. Taechakumput; Stephen Taylor; Octavian Buiu; R. J. Potter; Paul R. Chalker; A. C. Jones (Microelectron. Reliab., 2007)

Charge trapping characterization of MOCVD HfO2/p-Si interfaces at cryogenic temperatures. - I. P. Tyagulskyy; I. N. Osiyuk; V. S. Lysenko; A. N. Nazarov; Steve Hall; Octavian Buiu; Y. Lu; Richard Potter; Paul R. Chalker (Microelectron. Reliab., 2007)

Physical and electrical characterization of Mg-doped ZnO thin-film transistors. - A. Shaw; T. J. Whittles; Ivona Z. Mitrovic; J. D. Jin; J. S. Wrench; D. Hesp; V. R. Dhanak; Paul R. Chalker; Steve Hall (ESSDERC, 2015)

Effect of High-k Passivation Layer on Electrical Properties of GaN Metal-Insulator-Semiconductor Devices. - Yutao Cai; Yang Wang; Miao Cui; Wen Liu 010; Huiqing Wen; Cezhou Zhao; Ivona Z. Mitrovic; Stephen Taylor; Paul R. Chalker (ICICDT, 2019)

The Impact of Etch Depth of D-mode AlGaN/GaN MIS-HEMTs on DC and AC Characteristics of 10 V Input Direct-Coupled FET Logic (DCFL) Inverters. - Miao Cui; Yutao Cai; Qinglei Bu; Wen Liu 010; Huiqing Wen; Ivona Z. Mitrovic; Stephen Taylor; Paul R. Chalker; Cezhou Zhao (ICICDT, 2019)