A new test procedure to realistically estimate end-of-life electrical parameter stability of SiC MOSFETs in switching operation. - Paul Salmen; Maximilian W. Feil; Katja Waschneck; Hans Reisinger; Gerald Rescher; Thomas Aichinger (IRPS, 2021)

Towards Understanding the Physics of Gate Switching Instability in Silicon Carbide MOSFETs. - Maximilian W. Feil; Katja Waschneck; Hans Reisinger; Judith Berens; Thomas Aichinger; Paul Salmen; Gerald Rescher; Wolfgang Gustin; Tibor Grasser (IRPS, 2023)

SiC MOSFET threshold voltage stability during power cycling testing and the impact on the result interpretation. - Christian Schwabe; Xing Liu; Tobias N. Wassermann; Paul Salmen; Thomas Basler (IRPS, 2023)

Reliability of a 3.3 kV SiC MOSFET .XT. - Tobias N. Wassermann; Florian Holley; Paul Salmen (IRPS, 2025)