A Wideband Power Amplifier MMIC Utilizing GaN on SiC HEMT Technology. - Charles Campbell; Cathy Lee; Victoria Williams; Ming-Yih Kao; Hua-Quen Tserng; Paul Saunier; Tony Balistreri (IEEE J. Solid State Circuits, 2009)

Physical degradation of GaN HEMT devices under high drain bias reliability testing. - S. Y. Park; Carlo Floresca; Uttiya Chowdhury; Jose L. Jimenez; Cathy Lee; Edward Beam; Paul Saunier; Tony Balistreri; Moon J. Kim (Microelectron. Reliab., 2009)

Proton irradiation-induced traps causing VT instabilities and RF degradation in GaN HEMTs. - A. Sasikumar; Z. Zhang; P. Kumar; En-xia Zhang; Daniel M. Fleetwood; Ronald D. Schrimpf; Paul Saunier; Cathy Lee; S. A. Ringel; Aaron R. Arehart (IRPS, 2015)