Influence of the calibration kit on the estimation of parasitic effects in HEMT devices at microwave frequencies. - Jose Miguel Miranda; Christian Fager; Herbert Zirath; Paulius Sakalas; Sagrario Muñoz; Jose Luis Sebastián (IEEE Trans. Instrum. Meas., 2002)

Distortion Analysis of CE and CB SiGe HBT Power-Cells with fmax beyond 220 GHz for Millimeter-Wave Applications. - Paulius Sakalas; Anindya Mukherjee; Michael Schröter (BCICTS, 2019)

Design of a wideband, 4 - 42.5 GHz Low Noise Amplifier in 0.25 µm GaAs pHEMT Technology. - Mantas Sakalas; Paulius Sakalas (BCICTS, 2020)

3.2-mW Ultra-Low-Power 173-207-GHz Amplifier With 130-nm SiGe HBTs Operating in Saturation. - Yaxin Zhang; Wenfeng Liang; Xiaodi Jin; Mario Krattenmacher; Sophia Falk; Paulius Sakalas; Bernd Heinemann; Michael Schröter (IEEE J. Solid State Circuits, 2020)

An Experimental Load-Pull Based Large-Signal RF Reliability Study of SiGe HBTs. - Christoph Weimer; Paulius Sakalas; Markus Müller; Gerhard G. Fischer; Michael Schröter (BCICTS, 2021)

A 1.8 GHz to 43 GHz Low Noise Amplifier with 4 dB noise figure in 0.1 µm GaAs Technology. - Mantas Sakalas; Paulius Sakalas (BCICTS, 2022)