Improved reverse recovery characteristics obtained in 4H-SiC double-trench superjunction MOSFET with an integrated p-type Schottky diode. - Siva Kotamraju; Pavan Vudumula (IET Circuits Devices Syst., 2020)

Device optimization for 200V GaN-on-SOI Platform for Monolithicly Integrated Power Circuits. - Olga Syshchyk; Thibault Cosnier; Zheng-Hong Huang; Deepthi Cingu; Dirk Wellekens; Anurag Vohra; Karen Geens; Pavan Vudumula; Urmimala Chatterjee; Stefaan Decoutere; Tian-Li Wu; Benoit Bakeroot (ESSDERC, 2022)