Characterization and reliability of III-V gate-all-around MOSFETs. - Mengwei Si; SangHoon Shin; Nathan J. Conrad; Jiangjiang Gu; Jingyun Zhang; Muhammad Ashraful Alam; Peide D. Ye (IRPS, 2015)

Time Response of Polarization Switching in Ge Hafnium Zirconium Oxide Nanowire Ferroelectric Field-effect Transistors. - Sami Alghamdi; Wonil Chung; Mengwei Si; Peide D. Ye (DRC, 2018)

Alleviation of Short Channel Effects in Ge Negative Capacitance pFinFETs. - Wonil Chung; Mengwei Si; Peide D. Ye (DRC, 2018)

2D Ferroelectric CuInP2S6: Synthesis, ReRAM, and FeRAM. - Pai-Ying Liao; Mengwei Si; Gang Qiu; Peide D. Ye (DRC, 2018)

The Impact of Substrates on the Performance of Top-Gate p-Ga203 Field-Effect Transistors: Record High Drain Current of 980 mA/mm on Diamond. - Jinhyun Noh; Mengwei Si; Hong Zhou; Marko J. Tadjer; Peide D. Ye (DRC, 2018)

High-Performance Few-Layer Tellurium CMOS Devices Enabled by Atomic Layer Deposited Dielectric Doping Technique. - Gang Qiu; Mengwei Si; Yixiu Wang; Xiao Lyu; Wenzhuo Wu; Peide D. Ye (DRC, 2018)

Steep-Slope Hysteresis-Free Negative-Capacitance 2D Transistors. - Peide D. Ye (DRC, 2018)

Low frequency noise in MOS2 negative capacitance field-effect transistor. - Sami Alghamdi; Mengwei Si; Lingming Yang; Peide D. Ye (IRPS, 2018)

Modeling of Leakage-Assist-Switching in Ferroelectric/Dielectric Stack. - Mengwei Si; Xiao Lyu; Peide D. Ye (DRC, 2019)

Record RF Performance of Ultra-thin Indium Oxide Transistors with Buried-gate Structure. - Adam Charnas; Jackson Anderson; Jie Zhang; Dongqi Zheng; Dana Weinstein; Peide D. Ye (DRC, 2022)

Thermal Studies of BEOL-compatible Top-Gated Atomically Thin ALD In2O3 FETs. - Pai-Ying Liao; Sami Alajlouni; Mengwei Si; Zhuocheng Zhang; Zehao Lin; Jinhyun Noh; Calista Wilk; Ali Shakouri; Peide D. Ye (VLSI Technology and Circuits, 2022)

Ultra-Fast Operation of BEOL-Compatible Atomic-Layer-Deposited In2O3 Fe-FETs: Achieving Memory Performance Enhancement with Memory Window of 2.5 V and High Endurance > 109 Cycles without VT Drift Penalty. - Zehao Lin; Mengwei Si; Peide D. Ye (VLSI Technology and Circuits, 2022)

Determination of Domain Wall Velocity and Nucleation Time by Switching Dynamics Studies of Ferroelectric Hafnium Zirconium Oxide. - Xiao Lyu; Pragya R. Shrestha; Mengwei Si; Panni Wang; Junkang Li; Kin P. Cheung; Shimeng Yu; Peide D. Ye (VLSI Technology and Circuits, 2022)

FeFET-Based Synaptic Cross-Bar Arrays for Deep Neural Networks: Impact of Ferroelectric Thickness on Device-Circuit Non-Idealities and System Accuracy. - Chunguang Wang; Jeffry Victor; Atanu K. Saha; X. Chen; M. Si; T. Sharma; K. Roy; Peide D. Ye; Sumeet Kumar Gupta (DRC, 2023)

Ultrahigh Bias Stability of ALD In2O3 FETs Enabled by High Temperature O2 Annealing. - Zhuocheng Zhang; Zehao Lin; Chang Niu; Mengwei Si; Muhammad Ashraful Alam; Peide D. Ye (VLSI Technology and Circuits, 2023)

First Demonstration of BEOL-Compatible Atomic-Layer-Deposited InGaZnO TFTs with 1.5 nm Channel Thickness and 60 nm Channel Length Achieving ON/OFF Ratio Exceeding 1011, SS of 68 mV/dec, Normal-off Operation and High Positive Gate Bias Stability. - Jie Zhang; Zhuocheng Zhang; Zehao Lin; Ke Xu; Hongyi Dou; Bo Yang; Xinghang Zhang; Haiyan Wang; Peide D. Ye (VLSI Technology and Circuits, 2023)

Ultrathin Atomic-Layer-Deposited In2O3 Radio-Frequency Transistors with Record High fT of 36 GHz and BEOL Compatibility. - Dongqi Zheng; Adam Charnas; Jian-Yu Lin; Jackson Anderson; Dana Weinstein; Peide D. Ye (VLSI Technology and Circuits, 2023)

Positive to Negative Schottky Barrier Transition in Metal/Oxide Semiconductor Contacts by Tuning Indium Concentration in IGZO. - Sumi Lee; Chang Niu; Yizhi Zhang; Haiyan Wang; Peide D. Ye (VLSI Technology and Circuits, 2024)

Enhancement of In2O3 Field-Effect Mobility Up To 152 cm2.V-1·s-1Using HZO-Based Higher-k Linear Dielectric. - Zehao Lin; Chang Niu; Hyeongjun Jang; Taehyun Kim; Yizhi Zhang; Haiyan Wang; Changwook Jeong; Peide D. Ye (VLSI Technology and Circuits, 2024)

Analog Multilevel eDRAM-RRAM CIM for Zeroth-Order Fine-tuning of LLMs. - Mufeng Chen; Luqi Zheng; Jian-Yu Lin; Peide D. Ye; Haitong Li (IMW, 2025)

Asymmetric Reliability and Universality of Defect Formation in Oxide-Gated Ultra-Thin In2O3Vertical FETs for Monolithic 3-D Integration. - Chun-An Shih; Mir Md Fahimul Islam; Sumi Lee; Peide D. Ye; Muhammad Ashraful Alam (IRPS, 2025)