Duty cycle shift under static/dynamic aging in 28nm HK-MG technology. - Ketul B. Sutaria; Pengpeng Ren; Abinash Mohanty; Xixiang Feng; Runsheng Wang; Ru Huang 001; Yu Cao 001 (IRPS, 2015)

Layout dependent BTI and HCI degradation in nano CMOS technology: A new time-dependent LDE and impacts on circuit at end of life. - Pengpeng Ren; Runsheng Wang; Ru Huang 001 (ICICDT, 2016)

Towards reliability-aware circuit design in nanoscale FinFET technology: - New-generation aging model and circuit reliability simulator. - Shaofeng Guo; Runsheng Wang; Zhuoqing Yu; Peng Hao; Pengpeng Ren; Yangyuan Wang; Siyu Liao; Chunyi Huang; Tianlei Guo; Alvin Chen; Jushan Xie; Ru Huang 001 (ICCAD, 2017)

New insights into the HCI degradation of pass-gate transistor in advanced FinFET technology. - Pengpeng Ren; Changze Liu; Sanping Wan; Jiayang Zhang; Zhuoqing Yu; Nie Liu; Yongsheng Sun; Runsheng Wang; Canhui Zhan; Zhenghao Gan; Waisum Wong; Yu Xia; et al. (IRPS, 2018)

Investigation on NBTI-induced dynamic variability in nanoscale CMOS devices: Modeling, experimental evidence, and impact on circuits. - Shaofeng Guo; Runsheng Wang; Pengpeng Ren; Changze Liu; Mulong Luo; Xiaobo Jiang; Yangyuan Wang; Ru Huang 001 (Microelectron. Reliab., 2018)

Investigation on the Implementation of Stateful Minority Logic for Future In-Memory Computing. - Chunyang Liu; Pengpeng Ren; Bo Zhou 001; Jianfu Zhang 001; Hui Fang 003; Zhigang Ji (IEEE Access, 2021)

New Insight into the Aging Induced Retention Time Degraded of Advanced DRAM Technology. - Yong Liu; Pengpeng Ren; Da Wang; Longda Zhou; Zhigang Ji; Junhua Liu; Runsheng Wang; Ru Huang 001 (IRPS, 2022)

Towards the Characterization of Full ID-VG Degradation in Transistors for Future Analog Applications. - Pengpeng Ren; Xinfa Zhang; Junhua Liu; Runsheng Wang; Zhigang Ji; Ru Huang 001 (IRPS, 2022)

Characterization and Modelling of Hot Carrier Degradation in pFETs under Vd>Vg Condition for sub-20nm DRAM Technologies. - Da Wang; Yong Liu; Pengpeng Ren; Longda Zhou; Zhigang Ji; Junhua Liu; Runsheng Wang; Ru Huang 001 (IRPS, 2022)

Towards the understanding of ferroelectric-intrinsic variability and reliability issues on MCAM. - Yishan Wu; Puyang Cai; Zhiwei Liu; Pengpeng Ren; Zhigang Ji (IRPS, 2023)

Double-sided Row Hammer Effect in Sub-20 nm DRAM: Physical Mechanism, Key Features and Mitigation. - Longda Zhou; Jie Li; Zheng Qiao; Pengpeng Ren; Zixuan Sun; Jianping Wang; Blacksmith Wu; Zhigang Ji; Runsheng Wang; Kanyu Cao; Ru Huang 001 (IRPS, 2023)

Catching the Missing EM Consequence in Soft Breakdown Reliability in Advanced FinFETs: Impacts of Self-heating, On-State TDDB, and Layout Dependence. - Zuoyuan Dong; Zixuan Sun; Xin Yang; Xiaomei Li; Yongkang Xue; Chen Luo; Puyang Cai; Zirui Wang; Shuying Wang; Yewei Zhang; Chaolun Wang; Pengpeng Ren; et al. (VLSI Technology and Circuits, 2023)

Equiprobability-Based Local Response Surface Method for High-Sigma Yield Estimation With Both High Accuracy and Efficiency. - Xiang Liu; Pengpeng Ren; Hai-Bao Chen; Zhigang Ji; Junhua Liu; Runsheng Wang; Jianfu Zhang 001; Ru Huang 001 (IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2023)

Physics-Informed Learning for EPG-Based TDDB Assessment. - Dinghao Chen; Wenjie Zhu; Xiaoman Yang; Pengpeng Ren; Zhigang Ji; Hai-Bao Chen (ASPDAC, 2024)

Enforcing hard constraints in physics-informed learning for transient TSV electromigration analysis. - Xiaoman Yang; Hai-Bao Chen; Wenjie Zhu; Yuhan Zhang 005; Yongkang Xue; Pengpeng Ren; Runsheng Wang; Zhigang Ji; Ru Huang 001 (ICCAD, 2024)

Investigation of Interplays between Body Biasing and Hot Carrier Degradation (HCD) in Advanced NMOS FinFETs. - Zixuan Sun; Yongkang Xue; Haoran Lu; Pengpeng Ren; Zirui Wang; Zhigang Ji; Runsheng Wang; Ru Huang 001 (IRPS, 2024)

Sub-20-nm DRAM Technology under Negative Bias Temperature Instability (NBTI): from Characterization to Physical Origin Identification. - Da Wang; Yongkang Xue; Yong Liu; Pengpeng Ren; Zixuan Sun; Zirui Wang; Yueyang Liu; Zhijun Cheng; Haiyang Yang; Xiangli Liu; Blacksmith Wu; Kanyu Cao; et al. (IRPS, 2024)

A Thermal Profile Prediction Methodology for Nanosheet Circuits Featuring Cross-Layer Thermal Coupling Effect. - Shuying Wang; Yewei Zhang; Yunjoong Kim; Pengpeng Ren; Zhigang Ji (IRPS, 2024)

Convolution-Based Vth Shift Prediction and the New 9T2C Pixel Circuit in LTPS TFT AMOLED. - Shiyu Xia; Longda Zhou; Kewei Wang 008; Xiaobin Fan; Yongkang Xue; Qi Shan; Hannian Wang; Pengpeng Ren; Zhigang Ji; Ru Huang 001 (IRPS, 2024)

A New Method of Automatic Extraction of RTN and OMI-Friendly Implementation. - Yu Xiao; Chenyang Zhang; Da Wang; Yongkang Xue; Pengpeng Ren; Zhigang Ji (IRPS, 2024)

Investigation of Positive Bias Temperature Instability in advanced FinFET nodes. - Yongkang Xue; Miaojia Yuan; Yu Li; Da Wang; Maokun Wu; Pengpeng Ren; Lining Zhang; Runsheng Wang; Zhigang Ji; Ru Huang 001 (IRPS, 2024)

Understanding the Physical Mechanism of RowPress at the Device-Level in Sub-20 nm DRAM. - Longda Zhou; Jie Li; Pengpeng Ren; Sheng Ye; Da Wang; Zheng Qiao; Zhigang Ji (IRPS, 2024)

A strong physical unclonable function with machine learning immunity for Internet of Things application. - Pengpeng Ren; Yongkang Xue; Linglin Jing; Lining Zhang; Runsheng Wang; Zhigang Ji (Sci. China Inf. Sci., 2024)

DRGA-Based Second-Order Block Arnoldi Method for Model Order Reduction of MIMO RCS Circuits. - Hai-Bao Chen; Xinjie Zhang; Wenjie Zhu; Jie Chen 005; Pengpeng Ren; Zhigang Ji; Junhua Liu; Runsheng Wang; Ru Huang 001 (IEEE Trans. Circuits Syst. I Regul. Pap., 2024)

Fast Aging-Aware Timing Analysis Framework With Temporal-Spatial Graph Neural Network. - Jinfeng Ye; Pengpeng Ren; Yongkang Xue; Hui Fang 003; Zhigang Ji (IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2024)

High-Throughput Addressable Test Structure Design for Nano-Scaled CMOS Device Characterization. - Xiaolin Wang; Da Wang; Lei Guo; Pengpeng Ren; Zhigang Ji (IEEE Trans. Circuits Syst. II Express Briefs, 2024)

Physics-Informed Learning Based Multiphysics Simulation for Fast Transient TSV Electromigration Analysis. - Xiaoman Yang; Haibao Chen; Yuhan Zhang 005; Tianshu Hou; Pengpeng Ren; Runsheng Wang; Zhigang Ji; Ru Huang 001 (ACM Trans. Design Autom. Electr. Syst., 2025)