Hole mobility in InSb-based devices: Dependency on surface orientation, body thickness and strain. - Pengying Chang; Lang Zeng; Xiaoyan Liu; Gang Du (ESSDERC, 2014)

Systematic calibration of drift diffusion model for InGaAs MOSFETs in quasi-ballistic regime. - Shaoyan Di; Lei Shen; Pengying Chang; Kai Zhao; Tiao Lu; Gang Du; Xiaoyan Liu (Sci. China Inf. Sci., 2019)

Design space for stabilized negative capacitance in HfO2 ferroelectric-dielectric stacks based on phase field simulation. - Pengying Chang; Gang Du; Xiaoyan Liu (Sci. China Inf. Sci., 2021)

Intrinsic variations of ultrathin hafnium oxide-based ferroelectric tunnel junctions induced by ferroelectric-dielectric phase fluctuations. - Pengying Chang; Mengqi Fan; Gang Du; Xiaoyan Liu; Yiyang Xie (Sci. China Inf. Sci., 2023)