Material and device issues of AlGaN/GaN HEMTs on silicon substrates. - P. Javorka; A. Alam; Michel Marso; Mike Jean Wolter; Ján Kuzmík; A. Fox; M. Heuken; Peter Kordos (Microelectron. J., 2003)

Impact of layer structure on performance of unpassivated AlGaN/GaN HEMT. - Peter Kordos; Jan Bernát; Michel Marso (Microelectron. J., 2005)

High-temperature performance of AlGaN/GaN HFETs and MOSHFETs. - D. Donoval; Martin Florovic; Dagmar Gregusová; Jaroslav Kovác; Peter Kordos (Microelectron. Reliab., 2008)

Gate leakage current in GaN-based mesa- and planar-type heterostructure field-effect transistors. - Jaroslav Kovác; Alexander Satka; Ales Chvála; D. Donoval; Peter Kordos; Sylvain L. Delage (Microelectron. Reliab., 2012)