Reliability investigation of the degradation of the surface passivation of InAlN/GaN HEMTs using a dual gate structure. - Clemens Ostermaier; Peter Lagger; Mohammed Alomari; Patrick Herfurth; David Maier 002; Alexander Alexewicz; Marie-Antoinette di Forte-Poisson; Sylvain L. Delage; Gottfried Strasser; Dionyz Pogany; Erhard Kohn (Microelectron. Reliab., 2012)

Thermal activation of PBTI-related stress and recovery processes in GaN MIS-HEMTs using on-wafer heaters. - Peter Lagger; S. Donsa; P. Spreitzer; Gregor Pobegen; M. Reiner; H. Naharashi; J. Mohamed; H. Mosslacher; G. Prechtl; Dionyz Pogany; Clemens Ostermaier (IRPS, 2015)

Review of bias-temperature instabilities at the III-N/dielectric interface. - Clemens Ostermaier; Peter Lagger; M. Reiner; Dionyz Pogany (Microelectron. Reliab., 2018)