Technology considerations for automotive. - Herman Casier; Peter Moens; Koen Appeltans (ESSCIRC, 2004)

Evidence for source side injection hot carrier effects on lateral DMOS transistors. - Stefano Aresu; Ward De Ceuninck; Geert Van den Bosch; Guido Groeseneken; Peter Moens; Jean Manca; D. Wojciechowski; P. Gassot (Microelectron. Reliab., 2004)

Locating hot carrier injection in n-type DeMOS transistors by Charge Pumping and 2D device simulations. - Filip Bauwens; Peter Moens (Microelectron. Reliab., 2004)

TLP Characterization of large gate width devices. - Peter Coppens; G. Jenicot; Herman Casier; F. De Pestel; F. Depuydt; N. Martens; Peter Moens (Microelectron. Reliab., 2007)

Lifetime modeling of intrinsic gate oxide breakdown at high temperature. - R. Moonen; Piet Vanmeerbeek; G. Lekens; Ward De Ceuninck; Peter Moens; J. Boutsen (Microelectron. Reliab., 2007)

Integration of an SCR in an active clamp. - K. Reynders; Peter Moens (Microelectron. Reliab., 2007)

Next Generation Smart Power Technologies - Challenges and Innovations Enabling Complex SoC Integration. - Marnix Tack; Peter Moens; Renaud Gillon; Johan Janssens; Stefan Van Roeyen; Jan Sevenhans (ISSCC, 2008)

Reliability assessment of integrated power transistors: Lateral DMOS versus vertical DMOS. - Peter Moens; Geert Van den Bosch (Microelectron. Reliab., 2008)

Thermal resistance assessment in multi-trenched power devices. - Jaume Roig; B. Desoete; Filip Bauwens; F. Lovadina; Peter Moens (Microelectron. Reliab., 2008)

Next generation of Deep Trench Isolation for Smart Power technologies with 120 V high-voltage devices. - R. Charavel; Jaume Roig; S. Mouhoubi; P. Gassot; Filip Bauwens; Piet Vanmeerbeek; B. Desoete; Peter Moens; Eddy De Backer (Microelectron. Reliab., 2010)

Electric field unbalance for robust floating ring termination. - Ana Villamor-Baliarda; Piet Vanmeerbeek; Jaume Roig; Peter Moens; David Flores (Microelectron. Reliab., 2011)

High voltage low Ron in-situ SiN/Al0.35GaN0.65/GaN-on-Si power HEMTs operation up to 300°C. - Abel Fontserè; Amador Pérez-Tomás; Philippe Godignon; José Millán; J. M. Parsey; Peter Moens (ESSDERC, 2012)

Wafer scale and reliability investigation of thin HfO2·AlGaN/GaN MIS-HEMTs. - Abel Fontserè; Amador Pérez-Tomás; Philippe Godignon; José Millán; Herbert De Vleeschouwer; John M. Parsey; Peter Moens (Microelectron. Reliab., 2012)

Influence of charge balance on the robustness of trench-based super junction diodes. - Ana Villamor-Baliarda; Piet Vanmeerbeek; Michele Riccio; Vincenzo d'Alessandro; Andrea Irace; Jaume Roig; David Flores; Peter Moens (Microelectron. Reliab., 2012)

Technology and design of GaN power devices. - Peter Moens; Abhishek Banerjee 003; P. Coppens; Aurore Constant; Piet Vanmeerbeek; Z. Li; F. Declercq; L. De Schepper; H. De Vleeschouwer; C. Liu; B. Padmanabhan; W. Jeon; et al. (ESSDERC, 2015)

Trapping induced parasitic effects in GaN-HEMT for power switching applications. - Gaudenzio Meneghesso; Matteo Meneghini; Enrico Zanoni; Piet Vanmeerbeek; Peter Moens (ICICDT, 2015)

Evidence for temperature-dependent buffer-induced trapping in GaN-on-silicon power transistors. - Matteo Meneghini; Riccardo Silvestri; Stefano Dalcanale; Davide Bisi; Enrico Zanoni; Gaudenzio Meneghesso; Piet Vanmeerbeek; Abhishek Banerjee 003; Peter Moens (IRPS, 2015)

Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic ron. - Arno Stockman; Michael J. Uren; Alaleh Tajalli; Matteo Meneghini; Benoit Bakeroot; Peter Moens (ESSDERC, 2017)

Field and hot electron-induced degradation in GaN-based power MIS-HEMTs. - Alaleh Tajalli; Matteo Meneghini; Isabella Rossetto; Peter Moens; Abhishek Banerjee 003; Enrico Zanoni; Gaudenzio Meneghesso (Microelectron. Reliab., 2017)

On the origin of the leakage current in p-gate AlGaN/GaN HEMTs. - Arno Stockman; Eleonora Canato; Alaleh Tajalli; Matteo Meneghini; Gaudenzio Meneghesso; Enrico Zanoni; Peter Moens; Benoit Bakeroot (IRPS, 2018)

Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors. - Alaleh Tajalli; Eleonora Canato; Arianna Nardo; Matteo Meneghini; Arno Stockman; Peter Moens; Enrico Zanoni; Gaudenzio Meneghesso (Microelectron. Reliab., 2018)

µs-Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate. - Eleonora Canato; Fabrizio Masin; Matteo Borga; Enrico Zanoni; Matteo Meneghini; Gaudenzio Meneghesso; Arno Stockman; Abhishek Banerjee 003; Peter Moens (IRPS, 2019)

A Physical-Statistical Approach to AlGaN/GaN HEMT Reliability. - Peter Moens; Arno Stockman (IRPS, 2019)

Charge Trapping and Stability of E-Mode p-gate GaN HEMTs Under Soft- and Hard- Switching Conditions. - Fabrizio Masin; Matteo Meneghini; Eleonora Canato; Alessandro Barbato; Carlo De Santi; Arno Stockman; Abhishek Banerjee 003; Peter Moens; Enrico Zanoni; Gaudenzio Meneghesso (IRPS, 2020)

Analysis and Modeling of Vth Shift in 4H-SiC MOSFETs at Room and Cryogenic-Temperature. - Fabrizio Masin; Carlo De Santi; Arno Stockman; J. Lettens; F. Geenen; Gaudenzio Meneghesso; Enrico Zanoni; Peter Moens; Matteo Meneghini (IRPS, 2022)

The Concept of Safe Operating Area for Gate Dielectrics: the SiC/SiO2 Case Study. - Peter Moens; F. Geenen; L. De Schepper; JF Cano; J. Lettens; S. Maslougkas; J. Franchi; Martin Domeij (IRPS, 2023)

Threshold Voltage Drift and Recovery of SiC Trench MOSFETs During TDDB Stress. - M. Avramenko; L. De Schepper; J.-F. Cano; F. Geenen; Peter Moens; Alberto Marcuzzi; Carlo De Santi; Matteo Meneghini (IRPS, 2024)

Charge Trapping in SiC MOSFETs under Constant Gate Current Stress: Analysis Based on Charge Pumping Measurements. - Alberto Marcuzzi; M. Avramenko; Carlo De Santi; Peter Moens; F. Geenen; Gaudenzio Meneghesso; Enrico Zanoni; Matteo Meneghini (IRPS, 2024)

On the Intrinsic and Extrinsic Reliability Challenges of SiC MOSFETs. - Peter Moens; F. Geenen; M. Avramenko; G. Gomez-Garcia; Kevin Matocha (IRPS, 2024)

Recombination-Driven Interface Trap Generation in SiC MOSFETs Under Constant Voltage and Constant Current Stress. - Alberto Marcuzzi; M. Avramenko; Carlo De Santi; Peter Moens; G. J. Gomez Garcia; A. Feng; T. Grasser; Gaudenzio Meneghesso; Enrico Zanoni; Matteo Meneghini (IRPS, 2025)