Wireless communication integrated circuits with CMOS-compatible SiGe HBT technology modules. - Wolfgang Winkler; Johannes Borngräber; Heide Erzgraeber; Ha. Erzgraber; Bernd Heinemann; Dieter Knoll; H. Jörg Osten; Michael Pierschel; Klaus Pressel; Peter Schley (CICC, 1999)

Cost-effective integration of an FN-programmed embedded flash memory into a 0.25mum SiGe: C RF-BiCMOS technology. - Alexander Fox; K. E. Ehwald; Peter Schley; Rainer Barth; Steffen Marschmeyer; C. Wolf; V. E. Stikanov; A. Gromovyy; A. Hudyryev (Microelectron. J., 2006)

A 0.13 µm SiGe BiCMOS Technology Featuring fT/fmax of 240/330 GHz and Gate Delays Below 3 ps. - Holger Rücker; Bernd Heinemann; Wolfgang Winkler; Rainer Barth; Johannes Borngräber; Jürgen Drews; Gerhard G. Fischer; Alexander Fox; Thomas Grabolla; Ulrich Haak; Dieter Knoll; Falk Korndörfer; et al. (IEEE J. Solid State Circuits, 2010)

Low frequency MOS-CV technique for selfconsistent determination of dark currents in high resistivity substrates. - Roland Sorge; Jürgen Quick; Peter Schley; Detlef K. Bolze; Thomas Grabolla (ESSDERC, 2014)