Transistor and circuit design for 100-200-GHz ICs. - Zach Griffith; Yingda Dong; Dennis W. Scott; Yun Wei; Navin Parthasarathy; Mattias Dahlström; Christoph Kadow; Vamsi Paidi; Mark J. W. Rodwell; Miguel Urteaga; Richard Pierson; Petra Rowell; et al. (IEEE J. Solid State Circuits, 2005)

InP HBT IC Technology for Terahertz Frequencies: Fundamental Oscillators Up to 0.57 THz. - Munkyo Seo; Miguel Urteaga; Jonathan Hacker; Adam Young; Zach Griffith; Vibhor Jain; Richard Pierson; Petra Rowell; Anders Skalare; Alejandro Peralta; Robert Lin; David Pukala; et al. (IEEE J. Solid State Circuits, 2011)

50 - 250 GHz High-Gain Power Amplifier MMICs in 250-nm InP HBT. - Zach Griffith; Miguel Urteaga; Petra Rowell; Lan Tran; Bobby Brar (BCICTS, 2019)

Microtransfer-Printed InGaAs/InP HBTs Utilizing a Vertical Metal Sub-Collector Contact. - Andrew D. Carter; Miguel E. Urteaga; Petra Rowell; Joshua Bergman; Andrea Arias (DRC, 2019)

InP HBT Technologies for sub-THz Communications. - Miguel Urteaga; Zach Griffith; A. Arias-Purdue; A. Carter; Petra Rowell; J. Hacker; B. Brar (VLSI Technology and Circuits, 2022)

A Two-stage, Two-way-combined, 220-GHz Power Amplifier With 17.1% PAE in a 250-nm InP HBT Process. - Eythan Lam; Jeff Shieh-Chieh Chien; Petra Rowell; Miguel Urteaga; James F. Buckwalter (BCICTS, 2024)