A 34MB/s-Program-Throughput 16Gb MLC NAND with All-Bitline Architecture in 56nm. - Raul Cernea; Long Pham; Farookh Moogat; Siu Lung Chan; Binh Le; Yan Li; Shouchang Tsao; Taiyuan Tseng; Khanh Nguyen; Jason Li 001; Jayson Hu; Jong Park; et al. (ISSCC, 2008)

A 16Gb 3b/ Cell NAND Flash Memory in 56nm with 8MB/s Write Rate. - Yan Li; Seungpil Lee; Yupin Fong; Feng Pan; Tien-Chien Kuo; Jong Park; Tapan Samaddar; Hao Nguyen; Man Mui; Khin Htoo; Teruhiko Kamei; Masaaki Higashitani; et al. (ISSCC, 2008)

A 34 MB/s MLC Write Throughput 16 Gb NAND With All Bit Line Architecture on 56 nm Technology. - Raul Cernea; Long Pham; Farookh Moogat; Siu Lung Chan; Binh Le; Yan Li; Shouchang Tsao; Taiyuan Tseng; Khanh Nguyen; Jason Li 001; Jayson Hu; Jonghak Yuh; et al. (IEEE J. Solid State Circuits, 2009)

A 16 Gb 3-Bit Per Cell (X3) NAND Flash Memory on 56 nm Technology With 8 MB/s Write Rate. - Yan Li; Seungpil Lee; Yupin Fong; Feng Pan; Tien-Chien Kuo; Jongmin Park; Tapan Samaddar; Hao Nguyen; Man Mui; Khin Htoo; Teruhiko Kamei; Masaaki Higashitani; et al. (IEEE J. Solid State Circuits, 2009)