Integrated, variable-reluctance magnetic minimotor. - Eugene J. O'Sullivan; Emanuel I. Cooper; Lubomyr T. Romankiw; Keith T. Kwietniak; Philip Louis Trouilloud; Jean Horkans; Christopher V. Jahnes; Inna V. Babich; Sol Krongelb; Suryanarayan G. Hegde; James A. Tornello; Nancy C. LaBianca; et al. (IBM J. Res. Dev., 1998)

Rapid-turnaround characterization methods for MRAM development. - David William Abraham; Philip Louis Trouilloud; Daniel Christopher Worledge (IBM J. Res. Dev., 2006)

Two-level BEOL processing for rapid iteration in MRAM development. - Michael C. Gaidis; Eugene J. O'Sullivan; Janusz Jozef Nowak; Yu Lu; Sivananda K. Kanakasabapathy; Philip Louis Trouilloud; Daniel Christopher Worledge; Solomon Assefa; Keith R. Milkove; George P. Wright; William J. Gallagher (IBM J. Res. Dev., 2006)

Low-current Spin Transfer Torque MRAM. - Guohan Hu; J. J. Nowak; G. Lauer; J. H. Lee; J. Z. Sun; J. Harms; Anthony J. Annunziata; S. Brown; W. Chen; Y. H. Kim; N. Marchack; Sunil Murthy; et al. (VLSI-DAT, 2017)

Reliable Sub-nanosecond MRAM with Double Spin-torque Magnetic Tunnel Junctions. - C. Safranski; Guohan Hu; J. Z. Sun; P. Hashemi; S. L. Brown; L. Buzi; C. P. D'Emic; E. R. J. Edwards; Eileen A. Galligan; M. G. Gottwald; O. Gunawan; S. Karimeddiny; et al. (VLSI Technology and Circuits, 2022)

First Demonstration of High Retention Energy Barriers and 2 ns Switching, Using Magnetic Ordered-Alloy-Based STT MRAM Devices. - M. G. Gottwald; Guohan Hu; Philip Louis Trouilloud; L. Rehm; C. Safranski; G. Kim; S. L. Brown; J. Bruley; C. P. D'Emic; O. Gunawan; H. Jung; C. Lavoie; et al. (VLSI Technology and Circuits, 2024)