Modeling of a floating-gate EEPROM cell using a charge sheet approach including variable tunneling capacitance and polysilicon gate depletion effect. - Rachid Bouchakour; Nadia Harabech; Pierre Canet; Philippe Boivin; Jean Michel Mirable (ISCAS (4), 2001)

EEPROM programming study-time and degradation aspects. - Pierre Canet; Rachid Bouchakour; Nadia Harabech; Philippe Boivin; Jean-Michel Mirabel (ISCAS (4), 2001)

A new structure to monitor electrical transients during programming of EEPROM memory cells. - Nicolas Baboux; Carole Plossu; Philippe Boivin (Microelectron. Reliab., 2004)

Dynamic Fowler-Nordheim injection in EEPROM tunnel oxides at realistic time scales. - Nicolas Baboux; Carole Plossu; Philippe Boivin (Microelectron. Reliab., 2005)

Impact of wafer charging on hot carrier reliability and optimization of latent damage detection methodology in advanced CMOS technologies. - Didier Goguenheim; Alain Bravaix; S. Gomri; J. M. Moragues; C. Monserie; N. Legrand; Philippe Boivin (Microelectron. Reliab., 2005)

Peculiarities of electron tunnel injection to the drain of EEPROMs. - Nicolas Baboux; C. Busseret; Carole Plossu; Philippe Boivin (Microelectron. Reliab., 2007)