The role of the temperature on the scattering mechanisms limiting the electron mobility in metal-oxide-semiconductor field-effect-transistors fabricated on (110) silicon-oriented wafers. - Philippe Gaubert; Akinobu Teramoto; Shigetoshi Sugawa; Tadahiro Ohmi (ESSDERC, 2012)

Influence of Si Surface Roughness on Electrical Characteristics of MOSFET with HfON Gate Insulator Formed by ECR Plasma Sputtering. - Dae-Hee Han; Shun'ichiro Ohmi; Tomoyuki Suwa; Philippe Gaubert; Tadahiro Ohmi (IEICE Trans. Electron., 2014)