The electron irradiation effects on silicon gate dioxide used for power MOS devices. - Marian Badila; Philippe Godignon; José Millán; S. Berberich; Gheorghe Brezeanu (Microelectron. Reliab., 2001)

IGBT gate driver IC with full-bridge output stage using a modified standard CMOS process. - Amador Pérez-Tomás; Xavier Jordà; Philippe Godignon; Jose Luis Gálvez; Miquel Vellvehí; José Millán (Microelectron. J., 2004)

Self-heating experimental study of 600V PT-IGBTs under low dissipation energies. - Xavier Perpiñà; Xavier Jordà; N. Mestres; Miquel Vellvehí; Philippe Godignon; José Millán (Microelectron. J., 2004)

Manufacturing and full characterization of silicon carbide-based multi-sensor micro-probes for biomedical applications. - Gemma Gabriel; Ivan Erill; Jaume Caro; Rodrigo Gómez; Dolors Riera; Rosa Villa; Philippe Godignon (Microelectron. J., 2007)

Coupled electro-thermal simulation of a DC/DC converter. - Miquel Vellvehí; Xavier Jordà; Philippe Godignon; Carles Ferrer 001; José Millán (Microelectron. Reliab., 2007)

Behaviour of 1.2 kV SiC JBS diodes under repetitive high power stress. - Viorel Banu; Pierre Brosselard; Xavier Jordà; Josep Montserrat; Philippe Godignon; José Millán (Microelectron. Reliab., 2008)

SiC Schottky Diodes for Harsh Environment Space Applications. - Philippe Godignon; Xavier Jordà; Miquel Vellvehí; Xavier Perpiñà; Viorel Banu; Demetrio López; Juan Barbero; Pierre Brosselard; Silvia Massetti (IEEE Trans. Ind. Electron., 2011)

High voltage low Ron in-situ SiN/Al0.35GaN0.65/GaN-on-Si power HEMTs operation up to 300°C. - Abel Fontserè; Amador Pérez-Tomás; Philippe Godignon; José Millán; J. M. Parsey; Peter Moens (ESSDERC, 2012)

Enhanced power cycling capability of SiC Schottky diodes using press pack contacts. - Viorel Banu; Philippe Godignon; Xavier Perpiñà; Xavier Jordà; José Millán (Microelectron. Reliab., 2012)

Wafer scale and reliability investigation of thin HfO2·AlGaN/GaN MIS-HEMTs. - Abel Fontserè; Amador Pérez-Tomás; Philippe Godignon; José Millán; Herbert De Vleeschouwer; John M. Parsey; Peter Moens (Microelectron. Reliab., 2012)

High temperature-low temperature coefficient analog voltage reference integrated circuit implemented with SiC MESFETs. - Viorel Banu; Philippe Godignon; Mihaela Alexandru; Miquel Vellvehí; Xavier Jordà; José Millán (ESSCIRC, 2013)

4H-SiC MESFET specially designed and fabricated for high temperature integrated circuits. - Mihaela Alexandru; Viorel Banu; Philippe Godignon; Miquel Vellvehí; José Millán (ESSDERC, 2013)

A positive impact of low proton irradiation energy on oxynitride gate 4H-SiC MOSFETs. - Matthieu Florentin; José Millán; Philippe Godignon; Mihaela Alexandru; Aurore Constant; Bernd Schmidt 008 (ESSDERC, 2014)

Study of surface weak spots on SiC Schottky Diodes under specific operating regimes by Infrared Lock-in sensing. - Javier Leon; Xavier Perpiñà; Miquel Vellvehí; Xavier Jordà; Philippe Godignon (ESSDERC, 2014)

Temperature effects on the ruggedness of SiC Schottky diodes under surge current. - Javier Leon; Xavier Perpiñà; Viorel Banu; Josep Montserrat; Maxime Berthou; Miquel Vellvehí; Philippe Godignon; Xavier Jordà (Microelectron. Reliab., 2014)

Analysis of an ESD failure mechanism on a SiC MESFET. - Tanguy Phulpin; David Trémouilles; Karine Isoird; Dominique Tournier; Philippe Godignon; Patrick Austin (Microelectron. Reliab., 2014)

Experimental analysis of planar edge terminations for high voltage 4H-SiC devices. - Victor Soler; Maxime Berthou; Andrei Mihaila; Josep Montserrat; Philippe Godignon; José Rebollo; José Millán (ESSDERC, 2015)

Failure analysis of ESD-stressed SiC MESFET. - Tanguy Phulpin; David Trémouilles; Karine Isoird; Dominique Tournier; Philippe Godignon; Patrick Austin (Microelectron. Reliab., 2015)

SiC Integrated Circuit Control Electronics for High-Temperature Operation. - Mihaela Alexandru; Viorel Banu; Xavier Jordà; Josep Montserrat; Miquel Vellvehí; Dominique Tournier; José Millán; Philippe Godignon (IEEE Trans. Ind. Electron., 2015)

Power cycling analysis method for high-voltage SiC diodes. - Viorel Banu; Victor Soler; Josep Montserrat; José Millán; Philippe Godignon (Microelectron. Reliab., 2016)

High-Voltage 4H-SiC Power MOSFETs With Boron-Doped Gate Oxide. - Victor Soler; Maria Cabello; Maxime Berthou; Josep Montserrat; José Rebollo; Philippe Godignon; Andrei Mihaila; Maria R. Rogina; Alberto Rodriguez 001; Javier Sebastián (IEEE Trans. Ind. Electron., 2017)

60-700 K CTAT and PTAT Temperature Sensors with 4H-SiC Schottky Diodes. - Razvan Pascu; Gheorghe Pristavu; Gheorghe Brezeanu; Florin Draghici; Philippe Godignon; Cosmin Romanitan; Matei Serbanescu; Adrian Tulbure (Sensors, 2021)

Full-SiC Single-Chip Buck and Boost MOSFET-JBS Converters for Ultimate Efficient Power Vertical Integration. - Ralph Makhoul; Abdelhakim Bourennane; Luong-Viêt Phung; Frédéric Richardeau; Mihai Lazar; Nour Beydoun; Sergueï Kostcheev; Philippe Godignon; Dominique Planson; Hervé Morel; David Bourrier (MIXDES, 2023)