Impact of Si/Al implantation on the forming voltage and pre-forming conduction modes in HfO2 based OxRAM cells. - M. Barlas; Boubacar Traore; Laurent Grenouillet; Stefania Bernasconi; Philippe Blaise; Mouhamad Alayan; Benoit Sklénard; Eric Jalaguier; Philippe Rodriguez; F. Mazen; E. Vilain; M. Guillermet; et al. (ESSDERC, 2016)

Guidelines for intermediate back end of line (BEOL) for 3D sequential integration. - Claire Fenouillet-Béranger; S. Beaurepaire; Fabien Deprat; Alexandre Ayres De Sousa; Laurent Brunet; Perrine Batude; Olivier Rozeau; François Andrieu; Paul Besombes; M.-P. Samson; Bernard Previtali; F. Nemouchi; et al. (ESSDERC, 2017)