Extraction of Fowler-Nordheim parameters of thin SiO2 oxide film including polysilicon gate depletion: validation with an EEPROM memory cell. - Nadia Harabech; Rachid Bouchakour; Pierre Canet; Philippe Pannier; Jean-Pierre Sorbier (ISCAS, 2000)

Modeling of a floating-gate EEPROM cell using a charge sheet approach including variable tunneling capacitance and polysilicon gate depletion effect. - Rachid Bouchakour; Nadia Harabech; Pierre Canet; Philippe Boivin; Jean Michel Mirable (ISCAS (4), 2001)

EEPROM programming study-time and degradation aspects. - Pierre Canet; Rachid Bouchakour; Nadia Harabech; Philippe Boivin; Jean-Michel Mirabel (ISCAS (4), 2001)

Decreasing EEPROM Programming Bias With Negative Voltage, Reliability Impact. - Romain Laffont; J. Razafindramora; Pierre Canet; Rachid Bouchakour; Jean-Michel Mirabel (MTDT, 2002)

Flash Memory Cell Compact Modeling Using PSP Model. - Anthony Maure; Pierre Canet; Frédéric Lalande; Bertrand Delsuc; Jean Devin (BMAS, 2008)

Extraction of 3D parasitic capacitances in 90 nm and 22 nm NAND flash memories. - Jérémy Postel-Pellerin; Frédéric Lalande; Pierre Canet; Rachid Bouchakour; F. Jeuland; B. Bertello; B. Villard (Microelectron. Reliab., 2009)

Modeling charge variation during data retention of MLC Flash memories. - Jérémy Postel-Pellerin; Frédéric Lalande; Pierre Canet; Rachid Bouchakour; F. Jeuland; L. Morancho (Microelectron. Reliab., 2009)

Access resistor modelling for EEPROM's retention test vehicle. - Pierre Canet; Jérémy Postel-Pellerin; Jean-Luc Ogier (Microelectron. Reliab., 2013)

Impact of endurance degradation on the programming efficiency and the energy consumption of NOR flash memories. - Vincenzo Della Marca; Jérémy Postel-Pellerin; Guillaume Just; Pierre Canet; Jean-Luc Ogier (Microelectron. Reliab., 2014)

Impact of resistive paths on NVM array reliability: Application to Flash & ReRAM memories. - Pierre Canet; Jérémy Postel-Pellerin; Hassen Aziza (Microelectron. Reliab., 2016)

An Augmented OxRAM Synapse for Spiking Neural Network (SNN) Circuits. - Hassen Aziza; Hussein Bazzi; Jérémy Postel-Pellerin; Pierre Canet; Mathieu Moreau; Adnan Harb (DTIS, 2019)

True random number generation exploiting SET voltage variability in resistive RAM memory arrays. - Jérémy Postel-Pellerin; Hussein Bazzi; Hassen Aziza; Pierre Canet; Mathieu Moreau; Vincenzo Della Marca; Adnan Harb (NVMTS, 2019)