Carbon-doped Ge2Sb2Te5 phase-change memory devices featuring reduced RESET current and power consumption. - Quentin Hubert; Carine Jahan; Alain Toffoli; Gabriele Navarro; S. Chandrashekar; Pierre Noe; Veronique Sousa; Luca Perniola; J.-F. Nodin; A. Persico; S. Maitrejean; A. Roule; et al. (ESSDERC, 2012)

Innovative GeS2/Sb2Te3 based phase change memory for low power applications. - Julia Kluge; Anthonin Verdy; Gabriele Navarro; Serge Blonkowski; Veronique Sousa; Sophie Chevalliez; Philippe Kowalczyk; Mathieu Bernard; Nicolas Bernier; Guillaume Bourgeois; Niccolo Castellani; Pierre Noe; et al. (NVMTS, 2017)

OTS selector devices: Material engineering for switching performance. - Marie Claire Cyrille; Anthonin Verdy; Gabriele Navarro; Guillaume Bourgeois; Julien Garrione; Mathieu Bernard; C. Sabbione; Pierre Noe; Etienne Nowak (ICICDT, 2018)

Carbon electrode for Ge-Se-Sb based OTS selector for ultra low leakage current and outstanding endurance. - Anthonin Verdy; Gabriele Navarro; Mathieu Bernard; Sophie Chevalliez; Niccolo Castellani; Emmanuel Nolot; Julien Garrione; Pierre Noe; Guillaume Bourgeois; Veronique Sousa; Marie Claire Cyrille; Etienne Nowak (IRPS, 2018)

EUROPULS: NEUROmorphic energy-efficient secure accelerators based on Phase change materials aUgmented siLicon photonicS. - Fabio Pavanello; Cédric Marchand 002; Ian O'Connor; Régis Orobtchouk; Fabien Mandorlo; Xavier Letartre; Sébastien Cueff; Elena-Ioana Vatajelu; Giorgio Di Natale; Benoit Cluzel; Aurelien Coillet; Benoît Charbonnier; et al. (ETS, 2023)

NEUROPULS: NEUROmorphic energy-efficient secure accelerators based on Phase change materials aUgmented siLicon photonicS. - Fabio Pavanello; Cédric Marchand 002; Ian O'Connor; Régis Orobtchouk; Fabien Mandorlo; Xavier Letartre; Sébastien Cueff; Elena-Ioana Vatajelu; Giorgio Di Natale; Benoit Cluzel; Aurelien Coillet; Benoît Charbonnier; et al. (CoRR, 2023)