Cross-cell interference variability aware model of fully planar NAND Flash memory including line edge roughness. - Pavel Poliakov; Pieter Blomme; Miguel Corbalan; Jan Van Houdt; Wim Dehaene (Microelectron. Reliab., 2011)

Trades-off between lithography line edge roughness and error-correcting codes requirements for NAND Flash memories. - Pavel Poliakov; Pieter Blomme; Alessandro Vaglio Pret; Miguel Corbalan Miranda; Roel Gronheid; Diederik Verkest; Jan Van Houdt; Wim Dehaene (Microelectron. Reliab., 2012)

Understanding and Variability of Lateral Charge Migration in 3D CT-NAND Flash with and Without Band-Gap Engineered Barriers. - Andrea Padovani; Milan Pesic; Mondol Anik Kumar; Pieter Blomme; Alexandre Subirats; Senthil Vadakupudhupalayam; Zunaid Baten; Luca Larcher (IRPS, 2019)