A Finite Element Model for Stochastic Set Operation in Phase-Change Memory. - Min-Kyu Shin; Donghwa Lee; Pil-Ryung Cha; Yongwoo Kwon (ICEIC, 2019)

BEOL Compatible Ultra-Low Operating Voltage (0.5 V) and Preconfigured Switching Polarization States in Effective 3 nm Ferroelectric HZO Capacitors. - Minjong Lee; Jin-Hyun Kim; Dan N. Le; Seojun Lee; Si-Un Song; Rino Choi; Youngbae Ahn; Seung Wook Ryu; Pil-Ryung Cha; Chang-Yong Nam; Seongbin Park; Jongmug Kang; et al. (VLSI Technology and Circuits, 2024)