Characterization of stress degradation effects and thermal properties of AlGaN/GaN HEMTs with photon emission spectral signatures. - Arkadiusz Glowacki; Piotr Laskowski; Christian Boit; Ponky Ivo; Eldad Bahat-Treidel; Reza Pazirandeh; Richard Lossy; Joachim Würfl; Günther Tränkle (Microelectron. Reliab., 2009)

Comparative study of AlGaN/GaN HEMTs robustness versus buffer design variations by applying Electroluminescence and electrical measurements. - Ponky Ivo; Arkadiusz Glowacki; Eldad Bahat-Treidel; Richard Lossy; Joachim Würfl; Christian Boit; Günther Tränkle (Microelectron. Reliab., 2011)

Reliability issues of GaN based high voltage power devices. - Joachim Würfl; Eldad Bahat-Treidel; Frank Brunner; E. Cho; Oliver Hilt; Ponky Ivo; A. Knauer; Paul Kurpas; Richard Lossy; Matthias Schulz; S. Singwald; Markus Weyers; et al. (Microelectron. Reliab., 2011)

Single- and double-heterostructure GaN-HEMTs devices for power switching applications. - Alberto Zanandrea; Eldad Bahat-Treidel; Fabiana Rampazzo; Antonio Stocco; Matteo Meneghini; Enrico Zanoni; Oliver Hilt; Ponky Ivo; Joachim Würfl; Gaudenzio Meneghesso (Microelectron. Reliab., 2012)

New degradation mechanism observed for AlGaN/GaN HEMTs with sub 100 nm scale unpassivated regions around the gate periphery. - Ponky Ivo; Eunjung Melanie Cho; Przemyslaw Kotara; Lars Schellhase; Richard Lossy; Ute Zeimer; Anna Mogilatenko; Joachim Würfl; Günther Tränkle; Arkadiusz Glowacki; Christian Boit (Microelectron. Reliab., 2014)