The Influence of the Stacked and Double Material Gate Structures on the Short Channel Effects in SOI MOSFETS. - Ehsanollah Fathi; Ashkan Behnam; Pouya Hashemi; Behzad Esfandyarpour; Morteza Fathipour (IEICE Trans. Electron., 2005)

Gate-all-around silicon nanowire complementary metal-oxide-semiconductors: top-down fabrication and transport enhancement techniques. - Pouya Hashemi (2010)

High-mobility high-Ge-content Si1-xGex-OI PMOS FinFETs with fins formed using 3D germanium condensation with Ge fraction up to x∼ 0.7, scaled EOT∼8.5Å and ∼10nm fin width. - Pouya Hashemi; Takashi Ando; Karthik Balakrishnan; John Bruley; Sebastian U. Engelmann; John A. Ott; Vijay Narayanan; D.-G. Park; Renee T. Mo; Effendi Leobandung (VLSIC, 2015)