Name Familiarity Detection using EEG-based Brain Computer Interface. - Prasanna Venkatesan Ravindran; A. Prasad Vinod 001 (TENCON, 2019)

Machine Learning Assisted Statistical Variation Analysis of Ferroelectric Transistors: From Experimental Metrology to Predictive Modeling. - Gihun Choe; Prasanna Venkatesan Ravindran; Anni Lu; Jae Hur; Maximilian Lederer; André Reck; Sarah Lombardo; Nashrah Afroze; Josh Kacher; Asif Islam Khan; Shimeng Yu (VLSI Technology and Circuits, 2022)

Design Framework for Ferroelectric Gate Stack Engineering of Vertical NAND Structures for Efficient TLC and QLC Operation. - Dipjyoti Das; Lance Fernandes; Prasanna Venkatesan Ravindran; Taeyoung Song; Chinsung Park; Nashrah Afroze; Mengkun Tian; Hang Chen; Winston Chem; Kijoon Kim; Jongho Woo; Suhwan Lim; et al. (IMW, 2024)

Comprehensive Time Dependent Dielectric Breakdown (TDDB) Characterization of Ferroelectric Capacitors Under Bipolar Stress Conditions. - Priyankka Gundlapudi Ravikumar; Prasanna Venkatesan Ravindran; Khandker Akif Aabrar; Taeyoung Song; Sharadindu Gopal Kirtania; Dipjyoti Das; Chinsung Park; Nashrah Afroze; Mengkun Tian; Shimeng Yu; Ahmad Ehtesham Islam; Suman Datta; et al. (IRPS, 2024)

Comparative Study of Channel Materials for Ferroelectric NAND Applications. - Lance Fernandes; Prasanna Venkatesan Ravindran; Mengkun Tian; Yu-Hsin Kuo; Nashrah Afroze; Salma Soliman; Sanghyun Kang; Dyutimoy Chakraborty; Taeyoung Song; Chengyang Zhang; Kijoon Kim; Kwangyou Seo; et al. (IMW, 2025)

Multi-Scale Modeling-Driven Material to Device Co-Optimization of Ferroelectric Capacitors with Oxygen Reservoir Layer (ORL) for Improved Endurance. - Andrea Padovani; Nashrah Afroze; Yu-Hsin Kuo; Priyankka Gundlapudi Ravikumar; Prasanna Venkatesan Ravindran; Mengkun Tian; Asif Khan; Jihoon Choi; Jun Hee Lee; Luca Larcher; Gaurav Thareja (IRPS, 2025)

Understanding Correlation Between Memory Window Closure, Leakage and Read Delay Effects for FEFET Reliability Improvement: Role of IL and FE Traps. - Priyankka Gundlapudi Ravikumar; Andrea Padovani; Prasanna Venkatesan Ravindran; Chinsung Park; Nashrah Afroze; Mengkun Tian; Suman Datta; Shimeng Yu; Luca Larcher; Gaurav Thareja; Asif Khan (IRPS, 2025)

Enhanced Memory Performance in Ferroelectric NAND Applications: The Role of Tunnel Dielectric Position for Robust 10-Year Retention. - Prasanna Venkatesan Ravindran; Andrea Padovani; Lance Fernandes; Priyankka Gundlapudi Ravikumar; Chinsung Park; Huy Tran; Zekai Wang; Hari Jayasankar; Amrit Garlapati; Taeyoung Song; Hang Chen; Winston Chern; et al. (IRPS, 2025)

Modeling Dynamic Interplay Between Charge Traps and Polarization for Memory Window Enhancement in Gate Injection Layers. - Minji Shon; Chinsung Park; Prasanna Venkatesan Ravindran; Lance Fernandes; Kijoon Kim; Jongho Woo; Suhwan Lim; Kwangsoo Kim; Wanki Kim; Daewon Ha; Suman Datta; Asif Khan; et al. (IRPS, 2025)